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    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 二极管类型 技术 电压 - 反向峰值(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 认证 安装类型 供应商设备封装
    GBJ2504

    GBJ2504

    BRIDGE RECT 1PHASE 400V 25A GBJ

    SMC Diode Solutions

    7,887
    GBJ2504

    规格书

    - 4-ESIP Tube Active Single Phase Standard 400 V 25 A 1.1 V @ 12.5 A 10 µA @ 400 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
    GBJ2508

    GBJ2508

    BRIDGE RECT 1PHASE 800V 25A GBJ

    SMC Diode Solutions

    8,920
    GBJ2508

    规格书

    - 4-ESIP Tube Active Single Phase Standard 800 V 25 A 1.1 V @ 12.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
    DB102S-G

    DB102S-G

    BRIDGE RECT 1PHASE 100V 1A DBS

    Comchip Technology

    2,937
    DB102S-G

    规格书

    - 4-SMD, Gull Wing Tape & Reel (TR) Obsolete Single Phase Standard 100 V 1 A 1.1 V @ 1 A 10 µA @ 100 V -55°C ~ 150°C (TJ) - - Surface Mount DBS
    BR605

    BR605

    BRIDGE RECT 1PHASE 50V 6A BR-6

    GeneSiC Semiconductor

    9,928
    BR605

    规格书

    - 4-Square, BR-6 Bulk Active Single Phase Standard 50 V 6 A 1 V @ 3 A 10 µA @ 50 V -65°C ~ 125°C (TJ) - - Through Hole BR-6
    BR61

    BR61

    BRIDGE RECT 1PHASE 100V 6A BR-6

    GeneSiC Semiconductor

    6,827
    BR61

    规格书

    - 4-Square, BR-6 Bulk Active Single Phase Standard 100 V 6 A 1 V @ 3 A 10 µA @ 100 V -65°C ~ 125°C (TJ) - - Through Hole BR-6
    BR610

    BR610

    BRIDGE RECT 1PHASE 1KV 6A BR-6

    GeneSiC Semiconductor

    2,352
    BR610

    规格书

    - 4-Square, BR-6 Bulk Active Single Phase Standard 1 kV 6 A 1 V @ 3 A 10 µA @ 1000 V -65°C ~ 125°C (TJ) - - Through Hole BR-6
    BR64

    BR64

    BRIDGE RECT 1PHASE 400V 6A BR-6

    GeneSiC Semiconductor

    5,278
    BR64

    规格书

    - 4-Square, BR-6 Bulk Active Single Phase Standard 400 V 6 A 1 V @ 3 A 10 µA @ 400 V -65°C ~ 125°C (TJ) - - Through Hole BR-6
    BR66

    BR66

    BRIDGE RECT 1PHASE 600V 6A BR-6

    GeneSiC Semiconductor

    9,337
    BR66

    规格书

    - 4-Square, BR-6 Bulk Active Single Phase Standard 600 V 6 A 1 V @ 3 A 10 µA @ 600 V -65°C ~ 125°C (TJ) - - Through Hole BR-6
    BR68

    BR68

    BRIDGE RECT 1PHASE 800V 6A BR-6

    GeneSiC Semiconductor

    4,852
    BR68

    规格书

    - 4-Square, BR-6 Bulk Active Single Phase Standard 800 V 6 A 1 V @ 3 A 10 µA @ 800 V -65°C ~ 125°C (TJ) - - Through Hole BR-6
    KBU8D

    KBU8D

    BRIDGE RECT 1PHASE 200V 8A KBU

    GeneSiC Semiconductor

    2,247
    KBU8D

    规格书

    - 4-SIP, KBU Bulk Active Single Phase Standard 200 V 8 A 1 V @ 8 A 10 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole KBU
    TT8M

    TT8M

    BRIDGE RECT 1PHASE 1KV 8A TT

    Diodes Incorporated

    2,681
    TT8M

    规格书

    - 4-SMD, Gull Wing Tape & Reel (TR) Active Single Phase Standard 1 kV 8 A 1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Surface Mount TT
    G3SBA20-M3/51

    G3SBA20-M3/51

    BRIDGE RECT 1PHASE 200V 2.3A GBU

    Vishay General Semiconductor - Diodes Division

    4,662
    G3SBA20-M3/51

    规格书

    - 4-SIP, GBU Tray Active Single Phase Standard 200 V 2.3 A 1 V @ 2 A 5 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole GBU
    G3SBA80-M3/51

    G3SBA80-M3/51

    BRIDGE RECT 1PHASE 800V 2.3A GBU

    Vishay General Semiconductor - Diodes Division

    5,269
    G3SBA80-M3/51

    规格书

    - 4-SIP, GBU Tray Active Single Phase Standard 800 V 2.3 A 1 V @ 2 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBU
    GBJ10K

    GBJ10K

    BRIDGE RECT 1PHASE 800V 10A GBJ

    GeneSiC Semiconductor

    2,362
    GBJ10K

    规格书

    - 4-SIP, GBJ Bulk Active Single Phase Standard 800 V 10 A 1.05 V @ 5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
    GBJ10D

    GBJ10D

    BRIDGE RECT 1PHASE 200V 10A GBJ

    GeneSiC Semiconductor

    2,000
    GBJ10D

    规格书

    - 4-SIP, GBJ Bulk Active Single Phase Standard 200 V 10 A 1.05 V @ 5 A 10 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
    GBJ10J

    GBJ10J

    BRIDGE RECT 1PHASE 600V 10A GBJ

    GeneSiC Semiconductor

    8,916
    GBJ10J

    规格书

    - 4-SIP, GBJ Bulk Active Single Phase Standard 600 V 10 A 1.05 V @ 5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
    GBJ10B

    GBJ10B

    BRIDGE RECT 1PHASE 100V 10A GBJ

    GeneSiC Semiconductor

    4,579
    GBJ10B

    规格书

    - 4-SIP, GBJ Bulk Active Single Phase Standard 100 V 10 A 1.05 V @ 5 A 10 µA @ 100 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
    GBJ10G

    GBJ10G

    BRIDGE RECT 1PHASE 400V 10A GBJ

    GeneSiC Semiconductor

    2,147
    GBJ10G

    规格书

    - 4-SIP, GBJ Bulk Active Single Phase Standard 400 V 10 A 1.05 V @ 5 A 5 µA @ 400 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
    GBJ10M

    GBJ10M

    BRIDGE RECT 1PHASE 1KV 10A GBJ

    GeneSiC Semiconductor

    3,000
    GBJ10M

    规格书

    - 4-SIP, GBJ Bulk Active Single Phase Standard 1 kV 10 A 1.05 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
    GBL005-E3/45

    GBL005-E3/45

    BRIDGE RECT 1PHASE 50V 3A GBL

    Vishay General Semiconductor - Diodes Division

    6,560
    GBL005-E3/45

    规格书

    - 4-SIP, GBL Tube Discontinued at Digi-Key Single Phase Standard 50 V 3 A 1.1 V @ 4 A 5 µA @ 50 V -55°C ~ 150°C (TJ) - - Through Hole GBL
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