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    场效应晶体管(FET)、MOSFET 阵列

    制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装

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    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
    IRF7316TRPBF

    IRF7316TRPBF

    MOSFET 2P-CH 30V 4.9A 8SO

    Infineon Technologies

    30,848
    IRF7316TRPBF

    规格书

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 4.9A 58mOhm @ 4.9A, 10V 1V @ 250µA 34nC @ 10V 710pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF7341TRPBFXTMA1

    IRF7341TRPBFXTMA1

    MOSFET 2N-CH 55V 4.7A 8DSO-902

    Infineon Technologies

    11,540
    IRF7341TRPBFXTMA1

    规格书

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel Logic Level Gate 55V 4.7A (Tc) 50mOhm @ 4.7A, 10V 1V @ 250µA 36nC @ 10V 740pF @ 25V 2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-8-902
    IPG16N10S4L61AATMA1

    IPG16N10S4L61AATMA1

    MOSFET 2N-CH 100V 16A 8TDSON

    Infineon Technologies

    18,011
    IPG16N10S4L61AATMA1

    规格书

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 100V 16A 61mOhm @ 16A, 10V 2.1V @ 90µA 11nC @ 10V 845pF @ 25V 29W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PG-TDSON-8-10
    IRF7389TRPBF

    IRF7389TRPBF

    MOSFET N/P-CH 30V 8SO

    Infineon Technologies

    2,795
    IRF7389TRPBF

    规格书

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V - 29mOhm @ 5.8A, 10V 1V @ 250µA 33nC @ 10V 650pF @ 25V 2.5W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IPG20N04S4L11ATMA1

    IPG20N04S4L11ATMA1

    MOSFET 2N-CH 40V 20A 8TDSON

    Infineon Technologies

    38,095
    IPG20N04S4L11ATMA1

    规格书

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 40V 20A 11.6mOhm @ 17A, 10V 2.2V @ 15µA 26nC @ 10V 1990pF @ 25V 41W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TDSON-8-4
    IRF7341TRPBF

    IRF7341TRPBF

    MOSFET 2N-CH 55V 4.7A 8SO

    Infineon Technologies

    15,612
    IRF7341TRPBF

    规格书

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 55V 4.7A 50mOhm @ 4.7A, 10V 1V @ 250µA 36nC @ 10V 740pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF7907TRPBF

    IRF7907TRPBF

    MOSFET 2N-CH 30V 9.1A/11A 8SO

    Infineon Technologies

    4,911
    IRF7907TRPBF

    规格书

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 9.1A, 11A 16.4mOhm @ 9.1A, 10V 2.35V @ 25µA 10nC @ 4.5V 850pF @ 15V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF7343TRPBF

    IRF7343TRPBF

    MOSFET N/P-CH 55V 4.7A/3.4A 8SO

    Infineon Technologies

    38,271
    IRF7343TRPBF

    规格书

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 55V 4.7A, 3.4A 50mOhm @ 4.7A, 10V 1V @ 250µA 36nC @ 10V 740pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IAUC45N04S6N070HATMA1

    IAUC45N04S6N070HATMA1

    MOSFET 2N-CH 40V 45A 8TDSON

    Infineon Technologies

    12,078
    IAUC45N04S6N070HATMA1

    规格书

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 40V 45A (Tj) 7mOhm @ 22A, 10V 3V @ 9µA 12nC @ 10V 701pF @ 25V 41W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TDSON-8-57
    IRF9358TRPBF

    IRF9358TRPBF

    MOSFET 2P-CH 30V 9.2A 8SO

    Infineon Technologies

    4,873
    IRF9358TRPBF

    规格书

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 9.2A 16.3mOhm @ 9.2A, 10V 2.4V @ 25µA 38nC @ 10V 1740pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
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