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    场效应晶体管(FET)、MOSFET 阵列

    制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装

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    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
    MSCSM120DUM31TBL1NG

    MSCSM120DUM31TBL1NG

    MOSFET 2N-CH 1200V 79A

    Microchip Technology

    3,193
    MSCSM120DUM31TBL1NG

    规格书

    - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120AM31TBL1NG

    MSCSM120AM31TBL1NG

    MOSFET 2N-CH 1200V 79A

    Microchip Technology

    2,052
    MSCSM120AM31TBL1NG

    规格书

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120HM50T3AG

    MSCSM120HM50T3AG

    MOSFET 4N-CH 1200V 55A

    Microchip Technology

    6,679
    MSCSM120HM50T3AG

    规格书

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 55A (Tc) 50mOhm @ 40A, 20V 2.7V @ 2mA 137nC @ 20V 1990pF @ 1000V 245W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120VR1M31C1AG

    MSCSM120VR1M31C1AG

    MOSFET 2N-CH 1200V 89A

    Microchip Technology

    9,240
    MSCSM120VR1M31C1AG

    规格书

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120DUM31CTBL1NG

    MSCSM120DUM31CTBL1NG

    MOSFET 2N-CH 1200V 79A

    Microchip Technology

    8,165
    MSCSM120DUM31CTBL1NG

    规格书

    - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120AM31CTBL1NG

    MSCSM120AM31CTBL1NG

    MOSFET 2N-CH 1200V 79A

    Microchip Technology

    3,104
    MSCSM120AM31CTBL1NG

    规格书

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120AM16T1AG

    MSCSM120AM16T1AG

    MOSFET 2N-CH 1200V 173A

    Microchip Technology

    5,028
    MSCSM120AM16T1AG

    规格书

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 173A (Tc) 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 745W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120DHM31CTBL2NG

    MSCSM120DHM31CTBL2NG

    MOSFET 2N-CH 1200V 79A

    Microchip Technology

    5,827
    MSCSM120DHM31CTBL2NG

    规格书

    - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Asymmetrical - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
    MCB40P1200LB-TUB

    MCB40P1200LB-TUB

    MOSFET 2N-CH 1200V 58A SMPD

    IXYS

    4,053
    MCB40P1200LB-TUB

    规格书

    - 9-SMD Power Module Tube Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 58A - - - - - - - - Surface Mount SMPD
    MSCSM120HM31T3AG

    MSCSM120HM31T3AG

    MOSFET 4N-CH 1200V 89A

    Microchip Technology

    8,784
    MSCSM120HM31T3AG

    规格书

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120HM31TBL2NG

    MSCSM120HM31TBL2NG

    MOSFET 4N-CH 1200V 79A

    Microchip Technology

    5,760
    MSCSM120HM31TBL2NG

    规格书

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120DDUM31TBL2NG

    MSCSM120DDUM31TBL2NG

    MOSFET 4N-CH 1200V 79A

    Microchip Technology

    8,448
    MSCSM120DDUM31TBL2NG

    规格书

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel, Common Source - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
    DF419MR20W3M1HFB11BPSA1

    DF419MR20W3M1HFB11BPSA1

    MOSFET 4N-CH 2000V 50A AG-EASY3B

    Infineon Technologies

    1,495
    DF419MR20W3M1HFB11BPSA1

    规格书

    EasyPACK™ Module Tray Active MOSFET (Metal Oxide) 4 N-Channel - 2000V (2kV) 50A (Tj) 26.5mOhm @ 60A, 18V 5.15V @ 34mA 234nC @ 18V 7240pF @ 1.2kV - -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY3B
    MSCSM120VR1M16CT3AG

    MSCSM120VR1M16CT3AG

    MOSFET 2N-CH 1200V 173A

    Microchip Technology

    6,962
    MSCSM120VR1M16CT3AG

    规格书

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 173A (Tc) 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 745W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120HM31CTBL2NG

    MSCSM120HM31CTBL2NG

    MOSFET 4N-CH 1200V 79A

    Microchip Technology

    7,468
    MSCSM120HM31CTBL2NG

    规格书

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120DDUM31CTBL2NG

    MSCSM120DDUM31CTBL2NG

    MOSFET 4N-CH 1200V 79A

    Microchip Technology

    6,453
    MSCSM120DDUM31CTBL2NG

    规格书

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel, Common Source - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120TAM31T3AG

    MSCSM120TAM31T3AG

    MOSFET 6N-CH 1200V 89A

    Microchip Technology

    7,863
    MSCSM120TAM31T3AG

    规格书

    - Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120AM11T3AG

    MSCSM120AM11T3AG

    MOSFET 2N-CH 1200V 254A

    Microchip Technology

    9,957
    MSCSM120AM11T3AG

    规格书

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 254A (Tc) 10.4mOhm @ 120A, 20V 2.8V @ 9mA 696nC @ 20V 9060pF @ 1000V 1.067kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    BSM180D12P2C101

    BSM180D12P2C101

    MOSFET 2N-CH 1200V 204A MODULE

    Rohm Semiconductor

    3,312
    BSM180D12P2C101

    规格书

    - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 204A (Tc) - 4V @ 35.2mA - 23000pF @ 10V 1130W -40°C ~ 150°C (TJ) - - - Module
    MSCSM120HM16T3AG

    MSCSM120HM16T3AG

    MOSFET 4N-CH 1200V 173A

    Microchip Technology

    8,197
    MSCSM120HM16T3AG

    规格书

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 173A (Tc) 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 745W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
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