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    场效应晶体管(FET)、MOSFET 阵列

    制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装

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    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
    PSMN4R2-40VSHX

    PSMN4R2-40VSHX

    MOSFET 2N-CH 40V 98A LFPAK56D

    Nexperia USA Inc.

    312
    PSMN4R2-40VSHX

    规格书

    - SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 40V 98A (Ta) 4.2mOhm @ 20A, 10V 3.6V @ 1mA 37nC @ 10V 2590pF @ 25V 85W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56D
    SQJQ936E-T1_GE3

    SQJQ936E-T1_GE3

    MOSFET 2N-CH 40V 100A PPAK8X8

    Vishay Siliconix

    1,870
    SQJQ936E-T1_GE3

    规格书

    TrenchFET® PowerPAK® 8 x 8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 100A (Tc) 2.3mOhm @ 5A, 10V 3.5V @ 250µA 113nC @ 10V 6600pF @ 25V 75W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® 8 x 8 Dual
    NVMJD2D7N04CLTWG

    NVMJD2D7N04CLTWG

    MOSFET N-CH 40V LFPAK56

    onsemi

    3,000
    NVMJD2D7N04CLTWG

    规格书

    - - Tape & Reel (TR) Active - - - - - - - - - - - - - - -
    BUK7V4R2-40HX

    BUK7V4R2-40HX

    MOSFET 2N-CH 40V 98A LFPAK56D

    Nexperia USA Inc.

    5,235
    BUK7V4R2-40HX

    规格书

    TrenchMOS™ SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 40V 98A (Ta) 4.2mOhm @ 20A, 10V 3.6V @ 1mA 37nC @ 10V 2590pF @ 25V 85W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56D
    FDPC8012S

    FDPC8012S

    MOSFET 2N-CH 25V 13A PWRCLIP-33

    onsemi

    3,000
    FDPC8012S

    规格书

    PowerTrench® 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical Logic Level Gate 25V 13A, 26A 7mOhm @ 12A, 4.5V 2.2V @ 250µA 8nC @ 4.5V 1075pF @ 13V 800mW, 900mW -55°C ~ 150°C (TJ) - - Surface Mount Powerclip-33
    SI7956DP-T1-E3

    SI7956DP-T1-E3

    MOSFET 2N-CH 150V 2.6A PPAK SO8

    Vishay Siliconix

    2,316
    SI7956DP-T1-E3

    规格书

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 150V 2.6A 105mOhm @ 4.1A, 10V 4V @ 250µA 26nC @ 10V - 1.4W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8 Dual
    CSD87355Q5DT

    CSD87355Q5DT

    MOSFET 2N-CH 30V 45A 8LSON

    Texas Instruments

    1,840
    CSD87355Q5DT

    规格书

    NexFET™ 8-PowerLDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical Logic Level Gate, 5V Drive 30V 45A - 1.9V @ 250µA 13.7nC @ 4.5V 1860pF @ 15V 2.8W -55°C ~ 155°C (TJ) - - Surface Mount 8-LSON (5x6)
    CSD86350Q5DT

    CSD86350Q5DT

    MOSFET 2N-CH 25V 40A 8LSON

    Texas Instruments

    250
    CSD86350Q5DT

    规格书

    - 8-PowerLDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 25V 40A (Ta) 5mOhm @ 25A, 5V, 1.1mOhm @ 25A, 5V 2.1V @ 250µA, 1.6V @ 250µA 10.7nC @ 4.5V, 25nC @ 4.5V 1870pF @ 12.5V, 4000pF @ 12.5V 13W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-LSON (5x6)
    NVMFD5C446NT1G

    NVMFD5C446NT1G

    MOSFET 2N-CH 40V 24A 8DFN

    onsemi

    1,450
    NVMFD5C446NT1G

    规格书

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 24A (Ta), 127A (Tc) 2.9mOhm @ 30A, 10V 3.5V @ 250µA 38nC @ 10V 2450pF @ 25V 3.2W (Ta), 89W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
    NVMFD5C650NLT1G

    NVMFD5C650NLT1G

    MOSFET 2N-CH 60V 21A 8DFN

    onsemi

    1,432
    NVMFD5C650NLT1G

    规格书

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 21A (Ta), 111A (Tc) 4.2mOhm @ 20A, 10V 2.2V @ 98µA 16nC @ 4.5V 2546pF @ 25V 3.5W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
    EPC2100

    EPC2100

    MOSFET 2N-CH 30V 10A DIE

    EPC

    230
    EPC2100

    规格书

    eGaN® Die Tape & Reel (TR) Active GaNFET (Gallium Nitride) 2 N-Channel (Half Bridge) - 30V 10A (Ta), 40A (Ta) 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V 2.5V @ 4mA, 2.5V @ 16mA 4.9nC @ 15V, 19nC @ 15V 475pF @ 15V, 1960pF @ 15V - -40°C ~ 150°C (TJ) - - Surface Mount Die
    NXH040P120MNF1PTG

    NXH040P120MNF1PTG

    MOSFET 2N-CH 1200V 30A

    onsemi

    3,945
    NXH040P120MNF1PTG

    规格书

    - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 30A (Tc) 56mOhm @ 25A, 20V 4.3V @ 10mA 122.1nC @ 20V 1505pF @ 800V 74W -40°C ~ 150°C (TJ) - - Chassis Mount -
    NXH040F120MNF1PTG

    NXH040F120MNF1PTG

    MOSFET 4N-CH 1200V 30A 22PIM

    onsemi

    4,571
    NXH040F120MNF1PTG

    规格书

    - Module Tray Active Silicon Carbide (SiC) 4 N-Channel - 1200V (1.2kV) 30A (Tc) 56mOhm @ 25A, 20V 4.3V @ 10mA 122.1nC @ 20V 1505pF @ 800V 74W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 22-PIM (33.8x42.5)
    NXH020P120MNF1PTG

    NXH020P120MNF1PTG

    MOSFET 2N-CH 1200V 51A

    onsemi

    2,022
    NXH020P120MNF1PTG

    规格书

    - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 51A (Tc) 30mOhm @ 50A, 20V 4.3V @ 20mA 213.5nC @ 20V 2420pF @ 800V 119W (Tj) -40°C ~ 150°C (TJ) - - Chassis Mount -
    NXH010P90MNF1PTG

    NXH010P90MNF1PTG

    MOSFET 2N-CH 900V 154A

    onsemi

    3,398
    NXH010P90MNF1PTG

    规格书

    - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 900V 154A (Tc) 14mOhm @ 100A, 15V 4.3V @ 40mA 546.4nC @ 15V 7007pF @ 450V 328W (Tj) -40°C ~ 150°C (TJ) - - Chassis Mount -
    CBB032M12FM3

    CBB032M12FM3

    MOSFET 4N-CH 1200V 40A

    Wolfspeed, Inc.

    4,304
    CBB032M12FM3

    规格书

    - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 40A (Tj) 42.6mOhm @ 30A, 15V 3.6V @ 11.5mA 118nC @ 15V 3400pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount -
    NXH020F120MNF1PTG

    NXH020F120MNF1PTG

    MOSFET 4N-CH 1200V 51A 22PIM

    onsemi

    1,924
    NXH020F120MNF1PTG

    规格书

    - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 51A (Tc) 30mOhm @ 50A, 20V 4.3V @ 20mA 213.5nC @ 20V 2420pF @ 800V 119W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 22-PIM (33.8x42.5)
    NXH010P120MNF1PTG

    NXH010P120MNF1PTG

    MOSFET 2N-CH 1200V 114A

    onsemi

    2,426
    NXH010P120MNF1PTG

    规格书

    - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 114A (Tc) 14mOhm @ 100A, 20V 4.3V @ 40mA 454nC @ 20V 4707pF @ 800V 250W (Tj) -40°C ~ 150°C (TJ) - - Chassis Mount -
    CAB011M12FM3

    CAB011M12FM3

    MOSFET 2N-CH 1200V 105A

    Wolfspeed, Inc.

    2,579
    CAB011M12FM3

    规格书

    WolfPACK™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 105A 14mOhm @ 100A, 15V 3.6V @ 35mA 324nC @ 15V 10300pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount -
    FBG20N04AC

    FBG20N04AC

    MOSFET 200V 4A 4SMD

    EPC Space, LLC

    330
    FBG20N04AC

    规格书

    eGaN® 4-SMD, No Lead Bulk Active MOSFET (Metal Oxide) - Logic Level Gate 200V 4A (Tc) 130mOhm @ 4A, 5V 2.8V @ 1mA 3nC @ 5V 150pF @ 100V - -55°C ~ 150°C (TJ) - - Surface Mount 4-SMD
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