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      当前位置：首页 > 商品目录  > 分立半导体产品 > 晶体管 > 场效应晶体管（FETs）、金属氧化物半导体场效应晶体管（MOSFETs） > 场效应晶体管（FETs）、MOSFETs

      场效应晶体管（FETs）、MOSFETs

      制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压（最大导通电阻，最小导通电阻） 导通电阻 (Rds On)（最大值）@ Id, Vgs 栅极阈值电压 (Vgs(th)）（最大值）@ Id 栅极电荷 (Qg)（最大值）@ Vgs 栅极电压 (Vgs)（最大值） 输入电容 (Ciss)（最大值）@ Vds FET 特性 功耗（最大值） 工作温度 等级 认证 安装类型 供应商设备封装

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      图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压（最大导通电阻，最小导通电阻） 导通电阻 (Rds On)（最大值）@ Id, Vgs 栅极阈值电压 (Vgs(th)）（最大值）@ Id 栅极电荷 (Qg)（最大值）@ Vgs 栅极电压 (Vgs)（最大值） 输入电容 (Ciss)（最大值）@ Vds FET 特性 功耗（最大值） 工作温度 等级 认证 安装类型 供应商设备封装
      IXFH90N65X3

      IXFH90N65X3

      MOSFET 90A 650V X3 TO247

      Littelfuse Inc.

      		 300
      立即询价
      		IXFH90N65X3

      规格书

             		HiPerFET™, Ultra X3 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 90A (Tc) 10V 33mOhm @ 45A, 10V 5.2V @ 4mA 95 nC @ 10 V ±20V 6080 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXFH)
      IXFH18N100Q3

      IXFH18N100Q3

      MOSFET N-CH 1000V 18A TO247AD

      Littelfuse Inc.

      		 691
      立即询价
      		IXFH18N100Q3

      规格书

             		HiPerFET™, Q3 Class TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 18A (Tc) 10V 660mOhm @ 9A, 10V 6.5V @ 4mA 90 nC @ 10 V ±30V 4890 pF @ 25 V - 830W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD (IXFH)
      NVH4L040N120SC1

      NVH4L040N120SC1

      SICFET N-CH 1200V 58A TO247-4

      onsemi

      		 221
      立即询价
      		NVH4L040N120SC1

      规格书

             		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 58A (Tc) 20V 56mOhm @ 35A, 20V 4.3V @ 10mA 106 nC @ 20 V +25V, -15V 1762 pF @ 800 V - 319W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
      IXFK150N30X3

      IXFK150N30X3

      MOSFET N-CH 300V 150A TO264

      Littelfuse Inc.

      		 575
      立即询价
      		IXFK150N30X3

      规格书

             		HiPerFET™, Ultra X3 TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 300 V 150A (Tc) 10V 8.3mOhm @ 75A, 10V 4.5V @ 4mA 177 nC @ 10 V ±20V 13100 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264
      GAN063-650WSAQ

      GAN063-650WSAQ

      GANFET N-CH 650V 34.5A TO247-3

      Nexperia USA Inc.

      		 547
      立即询价
      		GAN063-650WSAQ

      规格书

             		- TO-247-3 Tube Active N-Channel GaNFET (Cascode Gallium Nitride FET) 650 V 34.5A (Tc) 10V 60mOhm @ 25A, 10V 4.5V @ 1mA 15 nC @ 10 V ±20V 1000 pF @ 400 V - 143W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3
      IXFX320N17T2

      IXFX320N17T2

      MOSFET N-CH 170V 320A PLUS247-3

      Littelfuse Inc.

      		 152
      立即询价
      		IXFX320N17T2

      规格书

             		HiPerFET™, TrenchT2™ TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 170 V 320A (Tc) 10V 5.2mOhm @ 60A, 10V 5V @ 8mA 640 nC @ 10 V ±20V 45000 pF @ 25 V - 1670W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PLUS247™-3
      IXFK44N80P

      IXFK44N80P

      MOSFET N-CH 800V 44A TO264AA

      Littelfuse Inc.

      		 516
      立即询价
      		IXFK44N80P

      规格书

             		HiPerFET™, Polar TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 800 V 44A (Tc) 10V 190mOhm @ 22A, 10V 5V @ 8mA 198 nC @ 10 V ±30V 12000 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264AA (IXFK)
      IXTX90P20P

      IXTX90P20P

      MOSFET P-CH 200V 90A PLUS247-3

      Littelfuse Inc.

      		 496
      立即询价
      		IXTX90P20P

      规格书

             		PolarP™ TO-247-3 Variant Tube Active P-Channel MOSFET (Metal Oxide) 200 V 90A (Tc) 10V 44mOhm @ 22A, 10V 4V @ 1mA 205 nC @ 10 V ±20V 12000 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS247™-3
      IXFN102N30P

      IXFN102N30P

      MOSFET N-CH 300V 88A SOT227B

      Littelfuse Inc.

      		 285
      立即询价
      		IXFN102N30P

      规格书

             		HiPerFET™, Polar SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 300 V 88A (Tc) 10V 33mOhm @ 500mA, 10V 5V @ 4mA 224 nC @ 10 V ±20V 7500 pF @ 25 V - 600W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
      APT60N60BCSG

      APT60N60BCSG

      MOSFET N-CH 600V 60A TO247

      Microchip Technology

      		 132
      立即询价
      		APT60N60BCSG

      规格书

             		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 60A (Tc) 10V 45mOhm @ 44A, 10V 3.9V @ 3mA 190 nC @ 10 V ±30V 7200 pF @ 25 V - 431W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 [B]
      IXTH7P50

      IXTH7P50

      MOSFET P-CH 500V 7A TO247

      Littelfuse Inc.

      		 204
      立即询价
      		IXTH7P50

      规格书

             		- TO-247-3 Tube Active P-Channel MOSFET (Metal Oxide) 500 V 7A (Tc) 10V 1.5Ohm @ 500mA, 10V 5V @ 250µA 130 nC @ 10 V ±20V 3400 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXTH)
      C3M0045065D

      C3M0045065D

      GEN 3 650V 45 M SIC MOSFET

      Wolfspeed, Inc.

      		 454
      立即询价
      		C3M0045065D

      规格书

             		C3M™ TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 49A (Tc) 15V 60mOhm @ 17.6A, 15V 3.6V @ 4.84mA 63 nC @ 15 V +19V, -8V 1621 pF @ 600 V - 176W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-247-3
      C3M0075120K-A

      C3M0075120K-A

      75M 1200V 175C SIC FET

      Wolfspeed, Inc.

      		 299
      立即询价
      		C3M0075120K-A

      规格书

             		C3M™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 32A (Tc) 15V 90mOhm @ 20A, 15V 3.6V @ 5mA 53 nC @ 15 V +15V, -4V 1390 pF @ 1000 V - 136W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-247-4L
      SCT3080KLHRC11

      SCT3080KLHRC11

      SICFET N-CH 1200V 31A TO247N

      Rohm Semiconductor

      		 816
      立即询价
      		SCT3080KLHRC11

      规格书

             		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 31A (Tc) 18V 104mOhm @ 10A, 18V 5.6V @ 5mA 60 nC @ 18 V +22V, -4V 785 pF @ 800 V - 165W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247N
      SCT4036KEHRC11

      SCT4036KEHRC11

      1200V, 43A, 3-PIN THD, TRENCH-ST

      Rohm Semiconductor

      		 368
      立即询价
      		SCT4036KEHRC11

      规格书

             		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 43A (Tc) 18V 47mOhm @ 21A, 18V 4.8V @ 11.1mA 91 nC @ 18 V +21V, -4V 2335 pF @ 800 V - 176W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247N
      NTBG025N065SC1

      NTBG025N065SC1

      SILICON CARBIDE (SIC) MOSFET - 1

      onsemi

      		 2,245
      立即询价
      		NTBG025N065SC1

      规格书

             		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 106A (Tc) 15V, 18V 28.5mOhm @ 45A, 18V 4.3V @ 15.5mA 164 nC @ 18 V +22V, -8V 3480 pF @ 325 V - 395W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK-7
      IXFX140N30P

      IXFX140N30P

      MOSFET N-CH 300V 140A PLUS247-3

      Littelfuse Inc.

      		 330
      立即询价
      		IXFX140N30P

      规格书

             		HiPerFET™, Polar TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 300 V 140A (Tc) 10V 24mOhm @ 70A, 10V 5V @ 8mA 185 nC @ 10 V ±20V 14800 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS247™-3
      IXFR44N80P

      IXFR44N80P

      MOSFET N-CH 800V 25A ISOPLUS247

      Littelfuse Inc.

      		 240
      立即询价
      		IXFR44N80P

      规格书

             		HiPerFET™, Polar TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 25A (Tc) 10V 200mOhm @ 22A, 10V 5V @ 8mA 200 nC @ 10 V ±30V 12000 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS247™
      IPZ65R019C7XKSA1

      IPZ65R019C7XKSA1

      MOSFET N-CH 650V 75A TO247-4

      Infineon Technologies

      		 1,153
      立即询价
      		IPZ65R019C7XKSA1

      规格书

             		CoolMOS™ C7 TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 75A (Tc) 10V 19mOhm @ 58.3A, 10V 4V @ 2.92mA 215 nC @ 10 V ±20V 9900 pF @ 400 V - 446W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-4
      IXFN44N80P

      IXFN44N80P

      MOSFET N-CH 800V 39A SOT-227B

      Littelfuse Inc.

      		 244
      立即询价
      		IXFN44N80P

      规格书

             		HiPerFET™, Polar SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 800 V 39A (Tc) 10V 190mOhm @ 500mA, 10V 5V @ 8mA 200 nC @ 10 V ±30V 12000 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
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