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    场效应晶体管(FETs)、MOSFETs

    制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
    IPP60R160P7XKSA1

    IPP60R160P7XKSA1

    MOSFET N-CH 650V 20A TO220-3-1

    Infineon Technologies

    496
    IPP60R160P7XKSA1

    规格书

    CoolMOS™ P7 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 160mOhm @ 6.3A, 10V 4V @ 350µA 31 nC @ 10 V ±20V 1317 pF @ 400 V - 81W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
    R6015KNJTL

    R6015KNJTL

    MOSFET N-CH 600V 15A LPTS

    Rohm Semiconductor

    3,982
    R6015KNJTL

    规格书

    - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 290mOhm @ 6.5A, 10V 5V @ 1mA 37.5 nC @ 10 V ±20V 1050 pF @ 25 V - 184W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount LPTS
    IPL60R185C7AUMA1

    IPL60R185C7AUMA1

    MOSFET N-CH 600V 13A 4VSON

    Infineon Technologies

    2,922
    IPL60R185C7AUMA1

    规格书

    CoolMOS™ C7 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 185mOhm @ 5.3A, 10V 4V @ 260µA 24 nC @ 10 V ±20V 1080 pF @ 400 V - 77W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
    NVD5C648NLT4G

    NVD5C648NLT4G

    MOSFET N-CH 60V 18A/89A DPAK

    onsemi

    1,455
    NVD5C648NLT4G

    规格书

    - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 18A (Ta), 89A (Tc) 4.5V, 10V 4.1mOhm @ 45A, 10V 2.1V @ 250µA 39 nC @ 10 V ±20V 2900 pF @ 25 V - 3.1W (Ta), 72W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK
    IPB012N04NF2SATMA1

    IPB012N04NF2SATMA1

    TRENCH <= 40V

    Infineon Technologies

    795
    IPB012N04NF2SATMA1

    规格书

    StrongIRFET™2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 41A (Ta), 197A (Tc) 6V, 10V 1.25mOhm @ 100A, 10V 3.4V @ 189µA 239 nC @ 10 V ±20V 11300 pF @ 20 V - 3.8W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
    RJK1055DPB-00#J5

    RJK1055DPB-00#J5

    MOSFET N-CH 100V 23A LFPAK

    Renesas Electronics Corporation

    7,335
    RJK1055DPB-00#J5

    规格书

    - SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 23A (Ta) 10V 17mOhm @ 11.5A, 10V - 35 nC @ 10 V ±20V 2550 pF @ 10 V - 60W (Tc) 150°C (TJ) - - Surface Mount LFPAK
    R6524KNZ4C13

    R6524KNZ4C13

    650V 24A TO-247, HIGH-SPEED SWIT

    Rohm Semiconductor

    1,010
    R6524KNZ4C13

    规格书

    - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 185mOhm @ 11.3A, 10V 5V @ 750µA 45 nC @ 10 V ±20V 1850 pF @ 25 V - 245W (Tc) 150°C (TJ) - - Through Hole TO-247G
    R6524ENZ4C13

    R6524ENZ4C13

    650V 24A TO-247, LOW-NOISE POWER

    Rohm Semiconductor

    475
    R6524ENZ4C13

    规格书

    - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 185mOhm @ 11.3A, 10V 4V @ 750µA 70 nC @ 10 V ±20V 1650 pF @ 25 V - 245W (Tc) 150°C (TJ) - - Through Hole TO-247G
    IPL60R185CFD7AUMA1

    IPL60R185CFD7AUMA1

    MOSFET N-CH 600V 14A 4VSON

    Infineon Technologies

    2,973
    IPL60R185CFD7AUMA1

    规格书

    CoolMOS™ CFD7 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 14A (Tc) 10V 185mOhm @ 6A, 10V 4.5V @ 300µA 28 nC @ 10 V ±20V 1199 pF @ 400 V - 85W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
    SIHP21N80AE-GE3

    SIHP21N80AE-GE3

    MOSFET N-CH 800V 17.4A TO220AB

    Vishay Siliconix

    976
    SIHP21N80AE-GE3

    规格书

    E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 17.4A (Tc) 10V 235mOhm @ 11A, 10V 4V @ 250µA 72 nC @ 10 V ±30V 1388 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    SIHP17N80AEF-GE3

    SIHP17N80AEF-GE3

    E SERIES POWER MOSFET WITH FAST

    Vishay Siliconix

    928
    SIHP17N80AEF-GE3

    规格书

    EF TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 15A (Tc) 10V 305mOhm @ 8.5A, 10V 4V @ 250µA 63 nC @ 10 V ±30V 1300 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    IQE050N08NM5ATMA1

    IQE050N08NM5ATMA1

    TRENCH 40<-<100V PG-TSON-8

    Infineon Technologies

    9,048
    IQE050N08NM5ATMA1

    规格书

    OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 16A (Ta), 101A (Tc) 6V, 10V 5mOhm @ 20A, 10V 3.8V @ 49µA 43.2 nC @ 10 V ±20V 2900 pF @ 40 V - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSON-8-4
    RD3L07BBGTL1

    RD3L07BBGTL1

    NCH 60V 115A, TO-252, POWER MOSF

    Rohm Semiconductor

    2,359
    RD3L07BBGTL1

    规格书

    - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 70A (Tc) 4.5V, 10V 3.9mOhm @ 70A, 10V 2.5V @ 1mA 47 nC @ 10 V ±20V 2950 pF @ 30 V - 102W (Tc) 150°C (TJ) - - Surface Mount TO-252
    IXFP8N85X

    IXFP8N85X

    MOSFET N-CH 850V 8A TO220AB

    IXYS

    278
    IXFP8N85X

    规格书

    HiPerFET™, Ultra X TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 850 V 8A (Tc) 10V 850mOhm @ 4A, 10V 5.5V @ 250µA 17 nC @ 10 V ±30V 654 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB (IXFP)
    TSM13ND50CI

    TSM13ND50CI

    MOSFET N-CH 500V 13A ITO220

    Taiwan Semiconductor Corporation

    3,848
    TSM13ND50CI

    规格书

    - TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 500 V 13A (Tc) 10V 480mOhm @ 3.3A, 10V 3.8V @ 250µA 39 nC @ 10 V ±30V 1877 pF @ 50 V - 57W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220
    PSMN0R7-25YLDX

    PSMN0R7-25YLDX

    MOSFET N-CH 25V 300A LFPAK56

    Nexperia USA Inc.

    3,113
    PSMN0R7-25YLDX

    规格书

    - SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 300A (Tc) 4.5V, 10V 0.72mOhm @ 25A, 10V 2.2V @ 1mA 110.2 nC @ 10 V ±20V 8320 pF @ 12 V - 158W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount LFPAK56; Power-SO8
    FCPF380N60E

    FCPF380N60E

    MOSFET N-CH 600V 10.2A TO220F

    onsemi

    1,945
    FCPF380N60E

    规格书

    SuperFET® II TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 10.2A (Tc) 10V 380mOhm @ 5A, 10V 3.5V @ 250µA 45 nC @ 10 V ±20V 1770 pF @ 25 V - 31W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    DMTH6004SCTBQ-13

    DMTH6004SCTBQ-13

    MOSFET N-CH 60V 100A TO263AB

    Diodes Incorporated

    467
    DMTH6004SCTBQ-13

    规格书

    - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 3.4mOhm @ 100A, 10V 4V @ 250µA 95.4 nC @ 10 V ±20V 4556 pF @ 30 V - 4.7W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263
    PSMNR60-25YLHX

    PSMNR60-25YLHX

    MOSFET N-CH 25V 300A LFPAK56

    Nexperia USA Inc.

    3,975
    PSMNR60-25YLHX

    规格书

    - SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) - 300A (Tc) 4.5V, 10V 700mOhm @ 25A, 10V 2.2V @ 2mA 147 nC @ 10 V ±20V 8117 pF @ 12 V - 268W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
    IRF540STRRPBF

    IRF540STRRPBF

    MOSFET N-CH 100V 28A D2PAK

    Vishay Siliconix

    1,476
    IRF540STRRPBF

    规格书

    - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 10V 77mOhm @ 17A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 1700 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
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