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    场效应晶体管(FETs)、MOSFETs

    制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
    STP25N80K5

    STP25N80K5

    MOSFET N-CH 800V 19.5A TO220

    STMicroelectronics

    1,000
    STP25N80K5

    规格书

    SuperMESH5™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 19.5A (Tc) 10V 260mOhm @ 19.5A, 10V 5V @ 100µA 40 nC @ 10 V ±30V 1600 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    R6030JNZC17

    R6030JNZC17

    MOSFET N-CH 600V 30A TO3PF

    Rohm Semiconductor

    300
    R6030JNZC17

    规格书

    - TO-3P-3 Full Pack Bag Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 15V 143mOhm @ 15A, 15V 7V @ 5.5mA 74 nC @ 15 V ±30V 2500 pF @ 100 V - 93W (Tc) 150°C (TJ) - - Through Hole TO-3PF
    TK160F10N1,LXGQ

    TK160F10N1,LXGQ

    MOSFET N-CH 100V 160A TO220SM

    Toshiba Semiconductor and Storage

    4,477
    TK160F10N1,LXGQ

    规格书

    U-MOSVIII-H TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 160A (Ta) 10V 2.4mOhm @ 80A, 10V 4V @ 1mA 121 nC @ 10 V ±20V 8510 pF @ 10 V - 375W (Tc) 175°C - - Surface Mount TO-220SM(W)
    BUK7S1R2-40HJ

    BUK7S1R2-40HJ

    MOSFET N-CH 40V 300A LFPAK88

    Nexperia USA Inc.

    4,578
    BUK7S1R2-40HJ

    规格书

    - SOT-1235 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 300A (Tc) 10V 1.2mOhm @ 25A, 10V 3.6V @ 1mA 112 nC @ 10 V +20V, -10V 8420 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK88 (SOT1235)
    TK22A65X,S5X

    TK22A65X,S5X

    X35 PB-F POWER MOSFET TRANSISTOR

    Toshiba Semiconductor and Storage

    183
    TK22A65X,S5X

    规格书

    - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Ta) 10V 150mOhm @ 11A, 10V 3.5V @ 1.1mA 50 nC @ 10 V ±30V 2400 pF @ 300 V - 45W (Tc) 150°C - - Through Hole TO-220SIS
    IPT022N10NF2SATMA1

    IPT022N10NF2SATMA1

    MOSFET

    Infineon Technologies

    1,800
    IPT022N10NF2SATMA1

    规格书

    StrongIRFET™ 2 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 29A (Ta), 236A (Tc) 6V, 10V 2.25mOhm @ 150A, 10V 3.8V @ 169µA 155 nC @ 10 V ±20V 7300 pF @ 50 V - 3.8W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8-10
    STH150N10F7-2

    STH150N10F7-2

    MOSFET N-CH 100V 110A H2PAK-2

    STMicroelectronics

    760
    STH150N10F7-2

    规格书

    DeepGATE™, STripFET™ VII TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 110A (Tc) 10V 3.9mOhm @ 55A, 10V 4.5V @ 250µA 117 nC @ 10 V ±20V 8115 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount H2PAK-2
    IXFP38N30X3M

    IXFP38N30X3M

    MOSFET N-CH 300V 38A TO220

    Littelfuse Inc.

    2,357
    IXFP38N30X3M

    规格书

    HiPerFET™, Ultra X3 TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 300 V 38A (Tc) - - - 35 nC @ 10 V ±20V 2440 pF @ 25 V - 34W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Isolated Tab
    R8011KNXC7G

    R8011KNXC7G

    HIGH-SPEED SWITCHING NCH 800V 11

    Rohm Semiconductor

    2,172
    R8011KNXC7G

    规格书

    - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 11A (Ta) 10V 450mOhm @ 5.5A, 10V 4.5V @ 5.5mA 37 nC @ 10 V ±20V 1200 pF @ 100 V - 65W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    IXTP3N100P

    IXTP3N100P

    MOSFET N-CH 1000V 3A TO220AB

    Littelfuse Inc.

    263
    IXTP3N100P

    规格书

    Polar P3™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 3A (Tc) 10V 4.8Ohm @ 1.5A, 10V 4.5V @ 250µA 39 nC @ 10 V ±20V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    IXFP36N20X3

    IXFP36N20X3

    MOSFET N-CH 200V 36A TO220

    Littelfuse Inc.

    154
    IXFP36N20X3

    规格书

    HiPerFET™, Ultra X3 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 200 V 36A (Tc) 10V 45mOhm @ 18A, 10V 4.5V @ 500µA 21 nC @ 10 V ±20V 1425 pF @ 25 V - 176W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    FCPF190N60

    FCPF190N60

    MOSFET N-CH 600V 20.2A TO220F

    onsemi

    635
    FCPF190N60

    规格书

    SuperFET® II TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20.2A (Tc) 10V 199mOhm @ 10A, 10V 3.5V @ 250µA 74 nC @ 10 V ±20V 2950 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    IRF644STRRPBF

    IRF644STRRPBF

    MOSFET N-CH 250V 14A D2PAK

    Vishay Siliconix

    605
    IRF644STRRPBF

    规格书

    - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 280mOhm @ 8.4A, 10V 4V @ 250µA 68 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    NTPF250N65S3H

    NTPF250N65S3H

    POWER MOSFET, N-CHANNEL, SUPERFE

    onsemi

    496
    NTPF250N65S3H

    规格书

    SuperFET® III TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 13A (Tj) 10V 250mOhm @ 6.5A, 10V 4V @ 1.1mA 24 nC @ 10 V ±30V 1261 pF @ 400 V - 29W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    IXFH34N50P3

    IXFH34N50P3

    MOSFET N-CH 500V 34A TO247AD

    IXYS

    292
    IXFH34N50P3

    规格书

    HiPerFET™, Polar3™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 34A (Tc) 10V 170mOhm @ 17A, 10V 5V @ 4mA 60 nC @ 10 V ±30V 3260 pF @ 25 V - 695W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD (IXFH)
    R6018JNXC7G

    R6018JNXC7G

    MOSFET N-CH 600V 18A TO220FM

    Rohm Semiconductor

    2,795
    R6018JNXC7G

    规格书

    - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 15V 286mOhm @ 9A, 15V 7V @ 4.2mA 42 nC @ 15 V ±30V 1300 pF @ 100 V - 72W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FM
    IPP60R120C7XKSA1

    IPP60R120C7XKSA1

    MOSFET N-CH 600V 19A TO220-3

    Infineon Technologies

    622
    IPP60R120C7XKSA1

    规格书

    CoolMOS™ C7 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 120mOhm @ 7.8A, 10V 4V @ 390µA 34 nC @ 10 V ±20V 1500 pF @ 400 V - 92W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    STL26N60DM6

    STL26N60DM6

    MOSFET N-CH 600V 15A PWRFLAT HV

    STMicroelectronics

    2,997
    STL26N60DM6

    规格书

    MDmesh™ DM6 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 215mOhm @ 7.5A, 10V 4.75V @ 250µA 24 nC @ 10 V ±25V 940 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerFlat™ (8x8) HV
    IPB024N08N5ATMA1

    IPB024N08N5ATMA1

    MOSFET N-CH 80V 120A D2PAK

    Infineon Technologies

    990
    IPB024N08N5ATMA1

    规格书

    OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 2.4mOhm @ 100A, 10V 3.8V @ 154µA 123 nC @ 10 V ±20V 8970 pF @ 40 V - 214W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
    IPW65R155CFD7XKSA1

    IPW65R155CFD7XKSA1

    HIGH POWER_NEW

    Infineon Technologies

    240
    IPW65R155CFD7XKSA1

    规格书

    CoolMOS™ CFD7 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 155mOhm @ 6.4A, 10V 4.5V @ 320µA 28 nC @ 10 V ±20V 1283 pF @ 400 V - 77W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3
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