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    场效应晶体管(FETs)、MOSFETs

    制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
    IXFQ60N50P3

    IXFQ60N50P3

    MOSFET N-CH 500V 60A TO3P

    Littelfuse Inc.

    316
    IXFQ60N50P3

    规格书

    HiPerFET™, Polar3™ TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 60A (Tc) 10V 100mOhm @ 30A, 10V 5V @ 4mA 96 nC @ 10 V ±30V 6250 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3P
    IXFA20N85XHV

    IXFA20N85XHV

    MOSFET N-CH 850V 20A TO263

    Littelfuse Inc.

    200
    IXFA20N85XHV

    规格书

    HiPerFET™, Ultra X TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 850 V 20A (Tc) 10V 330mOhm @ 500mA, 10V 5.5V @ 2.5mA 63 nC @ 10 V ±30V 1660 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263HV
    SIHG47N60AEF-GE3

    SIHG47N60AEF-GE3

    MOSFET N-CH 600V 40A TO247AC

    Vishay Siliconix

    216
    SIHG47N60AEF-GE3

    规格书

    EF TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 70mOhm @ 23.5A, 10V 4V @ 250µA 189 nC @ 10 V ±30V 3576 pF @ 100 V - 313W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
    STW56N65M2

    STW56N65M2

    MOSFET N-CH 650V 49A TO247

    STMicroelectronics

    114
    STW56N65M2

    规格书

    MDmesh™ M2 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 49A (Tc) 10V 62mOhm @ 24.5A, 10V 4V @ 250µA 93 nC @ 10 V ±25V 3900 pF @ 100 V - 358W (Tc) 150°C (TJ) - - Through Hole TO-247-3
    NTP055N65S3H

    NTP055N65S3H

    MOSFET N-CH 650V 47A TO220-3

    onsemi

    730
    NTP055N65S3H

    规格书

    SuperFET® III TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 47A (Tc) 10V 55mOhm @ 23.5A, 10V 4V @ 4.8mA 96 nC @ 10 V ±30V 4305 pF @ 400 V - 305W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    IPDD60R050G7XTMA1

    IPDD60R050G7XTMA1

    MOSFET N-CH 600V 47A HDSOP-10

    Infineon Technologies

    3,215
    IPDD60R050G7XTMA1

    规格书

    CoolMOS™ G7 10-PowerSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 50mOhm @ 15.9A, 10V 4V @ 800µA 68 nC @ 10 V ±20V 2670 pF @ 400 V - 278W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-10-1
    NVHL082N65S3F

    NVHL082N65S3F

    MOSFET N-CH 650V 40A TO247-3

    onsemi

    450
    NVHL082N65S3F

    规格书

    SuperFET® III, FRFET® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 40A (Tc) 10V 82mOhm @ 20A, 10V 5V @ 4mA 81 nC @ 10 V ±30V 3410 pF @ 400 V - 313W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole TO-247-3
    IXTP60N20X4

    IXTP60N20X4

    MOSFET ULTRA X4 200V 60A TO-220

    Littelfuse Inc.

    300
    IXTP60N20X4

    规格书

    - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 200 V 60A (Tc) 10V 21mOhm @ 30A, 10V 4.5V @ 250µA 33 nC @ 10 V ±20V 2450 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220 (IXTP)
    IXFH160N15T2

    IXFH160N15T2

    MOSFET N-CH 150V 160A TO247AD

    Littelfuse Inc.

    298
    IXFH160N15T2

    规格书

    HiPerFET™, TrenchT2™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 150 V 160A (Tc) 10V 9mOhm @ 80A, 10V 4.5V @ 1mA 253 nC @ 10 V ±20V 15000 pF @ 25 V - 880W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AD (IXFH)
    FCH072N60

    FCH072N60

    MOSFET N-CH 600V 52A TO247-3

    onsemi

    841
    FCH072N60

    规格书

    SuperFET® II TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 52A (Tc) 10V 72mOhm @ 26A, 10V 3.5V @ 250µA 125 nC @ 10 V ±20V 5890 pF @ 380 V - 481W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    NTH4LN067N65S3H

    NTH4LN067N65S3H

    POWER MOSFET, N-CHANNEL, SUPERFE

    onsemi

    218
    NTH4LN067N65S3H

    规格书

    SuperFET® III TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 40A (Tc) 10V 67mOhm @ 20A, 10V 4V @ 3.9mA 80 nC @ 10 V ±30V 3750 pF @ 400 V - 266W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-4
    IXFR36N60P

    IXFR36N60P

    MOSFET N-CH 600V 20A ISOPLUS247

    Littelfuse Inc.

    268
    IXFR36N60P

    规格书

    HiPerFET™, Polar TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 200mOhm @ 18A, 10V 5V @ 4mA 102 nC @ 10 V ±30V 5800 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS247™
    SIHG039N60EF-GE3

    SIHG039N60EF-GE3

    MOSFET N-CH 600V 61A TO247AC

    Vishay Siliconix

    435
    SIHG039N60EF-GE3

    规格书

    EF TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 61A (Tc) 10V 40mOhm @ 32A, 10V 5V @ 250µA 126 nC @ 10 V ±30V 4323 pF @ 100 V - 357W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
    NVBG089N65S3F

    NVBG089N65S3F

    SF3 FRFET AUTO, 89MOHM, D2PAK 7L

    onsemi

    800
    NVBG089N65S3F

    规格书

    - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 37A (Tc) 10V 89mOhm @ 18.5A, 10V 5V @ 970µA 74 nC @ 10 V ±30V 3598 pF @ 400 V - 291W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK-7
    NVHL080N120SC1A

    NVHL080N120SC1A

    SICFET N-CH 1200V 31A TO247-3

    onsemi

    890
    NVHL080N120SC1A

    规格书

    - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 31A (Tc) 20V 110mOhm @ 20A, 20V 4.3V @ 5mA 56 nC @ 20 V +25, -15V 1670 pF @ 800 V - 178W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-3
    R6035KNZ4C13

    R6035KNZ4C13

    MOSFET N-CH 600V 35A TO247

    Rohm Semiconductor

    600
    R6035KNZ4C13

    规格书

    - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 102mOhm @ 18.1A, 10V 5V @ 1mA 72 nC @ 10 V ±20V 3000 pF @ 25 V - 379W (Tc) 150°C (TJ) - - Through Hole TO-247
    IMZA65R057M1HXKSA1

    IMZA65R057M1HXKSA1

    SILICON CARBIDE MOSFET, PG-TO247

    Infineon Technologies

    150
    IMZA65R057M1HXKSA1

    规格书

    CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 35A (Tc) 18V 74mOhm @ 16.7A, 18V 5.7V @ 5mA 28 nC @ 18 V +20V, -2V 930 pF @ 400 V - 133W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-3
    R6547ENZ4C13

    R6547ENZ4C13

    650V 47A TO-247, LOW-NOISE POWER

    Rohm Semiconductor

    324
    R6547ENZ4C13

    规格书

    - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 47A (Tc) 10V 80mOhm @ 25.8A, 10V 4V @ 1.72mA 150 nC @ 10 V ±20V 3800 pF @ 25 V - 480W (Tc) 150°C (TJ) - - Through Hole TO-247G
    R6025JNZ4C13

    R6025JNZ4C13

    MOSFET N-CH 600V 25A TO247G

    Rohm Semiconductor

    597
    R6025JNZ4C13

    规格书

    - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 15V 182mOhm @ 12.5A, 15V 7V @ 4.5mA 57 nC @ 15 V ±30V 1900 pF @ 100 V - 306W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247G
    NTH4LN040N65S3H

    NTH4LN040N65S3H

    NTH4LN040N65S3H

    onsemi

    367
    NTH4LN040N65S3H

    规格书

    SuperFET® III TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 62A (Tc) 10V 40mOhm @ 31A, 10V 4V @ 6.8mA 132 nC @ 10 V ±30V 6513 pF @ 400 V - 379W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-4
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