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在线询价场效应晶体管（FETs）、MOSFETs
| 图片 | 型号 | 库存 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IXFK120N30P3MOSFET N-CH 300V 120A TO264AA |
110 |
|
规格书 |
HiPerFET™, Polar3™ | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 120A (Tc) | 10V | 27mOhm @ 60A, 10V | 5V @ 4mA | 150 nC @ 10 V | ±20V | 8630 pF @ 25 V | - | 1130W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
|
|
IXFK80N65X2MOSFET N-CH 650V 80A TO264 |
491 |
|
规格书 |
HiPerFET™, Ultra X2 | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 80A (Tc) | 10V | 40mOhm @ 40A, 10V | 5.5V @ 4mA | 143 nC @ 10 V | ±30V | 8245 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264AA |
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|
IXFX66N85XMOSFET N-CH 850V 66A PLUS247-3 |
250 |
|
规格书 |
HiPerFET™, Ultra X | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 850 V | 66A (Tc) | 10V | 65mOhm @ 500mA, 10V | 5.5V @ 8mA | 230 nC @ 10 V | ±30V | 8900 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS247™-3 |
|
NTHL040N65S3HFMOSFET N-CH 650V 65A TO247-3 |
393 |
|
规格书 |
FRFET®, SuperFET® III | TO-247-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 65A (Tc) | 10V | 40mOhm @ 32.5A, 10V | 5V @ 2.1mA | 159 nC @ 10 V | ±30V | 5945 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
IXFH26N100XMOSFET N-CH 1000V 26A TO247 |
260 |
|
规格书 |
HiPerFET™, Ultra X | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 26A (Tc) | 10V | 320mOhm @ 13A, 10V | 6V @ 4mA | 113 nC @ 10 V | ±30V | 3290 pF @ 25 V | - | 860W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
|
|
IXFK32N80PMOSFET N-CH 800V 32A TO264AA |
300 |
|
规格书 |
HiPerFET™, Polar | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 32A (Tc) | 10V | 270mOhm @ 16A, 10V | 5V @ 8mA | 150 nC @ 10 V | ±30V | 8800 pF @ 25 V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
|
|
IXFX24N100Q3MOSFET N-CH 1000V 24A PLUS247-3 |
300 |
|
规格书 |
HiPerFET™, Q3 Class | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 24A (Tc) | 10V | 440mOhm @ 12A, 10V | 6.5V @ 4mA | 140 nC @ 10 V | ±30V | 7200 pF @ 25 V | - | 1000W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS247™-3 |
|
SCT3080KW7TLSICFET N-CH 1200V 30A TO263-7 |
785 |
|
规格书 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | - | 104mOhm @ 10A, 18V | 5.6V @ 5mA | 60 nC @ 18 V | +22V, -4V | 785 pF @ 800 V | - | 159W | 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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|
IXTH60N20L2MOSFET N-CH 200V 60A TO247 |
329 |
|
规格书 |
Linear L2™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 60A (Tc) | 10V | 45mOhm @ 30A, 10V | 4.5V @ 250µA | 255 nC @ 10 V | ±20V | 10500 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
|
|
FCH060N80-F155MOSFET N-CH 800V 56A TO247 |
850 |
|
规格书 |
SuperFET® II | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 56A (Tc) | 10V | 60mOhm @ 29A, 10V | 4.5V @ 5.8mA | 350 nC @ 10 V | ±20V | 14685 pF @ 100 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
|
IXFX80N60P3MOSFET N-CH 600V 80A PLUS247-3 |
202 |
|
规格书 |
HiPerFET™, Polar3™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 80A (Tc) | 10V | 70mOhm @ 500mA, 10V | 5V @ 8mA | 190 nC @ 10 V | ±30V | 13100 pF @ 25 V | - | 1300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS247™-3 |
|
NVBG045N065SC1SIC MOS D2PAK-7L 650V |
790 |
|
规格书 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 62A (Tc) | 15V, 18V | 50mOhm @ 25A, 18V | 4.3V @ 8mA | 105 nC @ 18 V | +22V, -8V | 1890 pF @ 325 V | - | 242W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | D2PAK-7 |
|
|
NTHL019N65S3HMOSFET N-CH 650V 75A TO247-3 |
430 |
|
规格书 |
SuperFET® III | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 75A (Tc) | - | 19.3mOhm @ 37.5A, 10V | 4V @ 14.3mA | 282 nC @ 10 V | ±30V | 15993 pF @ 400 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
|
IXFX420N10TMOSFET N-CH 100V 420A PLUS247-3 |
289 |
|
规格书 |
HiPerFET™, Trench | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 420A (Tc) | 10V | 2.6mOhm @ 60A, 10V | 5V @ 8mA | 670 nC @ 10 V | ±20V | 47000 pF @ 25 V | - | 1670W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PLUS247™-3 |
|
NTH4L025N065SC1SILICON CARBIDE (SIC) MOSFET - 1 |
247 |
|
规格书 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 99A (Tc) | 15V, 18V | 28.5mOhm @ 45A, 18V | 4.3V @ 15.5mA | 164 nC @ 18 V | +22V, -8V | 3480 pF @ 15 V | - | 348W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
|
|
NVBG060N065SC1SIC MOS D2PAK-7L 650V |
1,580 |
|
规格书 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 46A (Tc) | 15V, 18V | 70mOhm @ 20A, 18V | 4.3V @ 6.5mA | 74 nC @ 18 V | - | 1473 pF @ 325 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | D2PAK-7 |
|
NTH4LN019N65S3HPOWER MOSFET, N-CHANNEL, SUPERFE |
309 |
|
规格书 |
SuperFET® III | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 75A (Tc) | 10V | 19.3mOhm @ 37.5A, 10V | 4V @ 14.3mA | 282 nC @ 10 V | ±30V | 15993 pF @ 400 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
IXFK200N10PMOSFET N-CH 100V 200A TO264AA |
300 |
|
规格书 |
HiPerFET™, Polar | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 200A (Tc) | 10V | 7.5mOhm @ 100A, 10V | 5V @ 8mA | 235 nC @ 10 V | ±20V | 7600 pF @ 25 V | - | 830W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
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|
SCT4026DRHRC15750V, 56A, 4-PIN THD, TRENCH-STR |
460 |
|
规格书 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 56A (Tc) | 18V | 34mOhm @ 29A, 18V | 4.8V @ 15.4mA | 94 nC @ 18 V | +21V, -4V | 2320 pF @ 500 V | - | 176W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
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|
SCT4026DEHRC11750V, 56A, 3-PIN THD, TRENCH-STR |
320 |
|
规格书 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 56A (Tc) | 18V | 34mOhm @ 29A, 18V | 4.8V @ 15.4mA | 94 nC @ 18 V | +21V, -4V | 2320 pF @ 500 V | - | 176W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247N |
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