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    单个 IGBTs

    制造商 系列 封装/外壳 包装 产品状态 IGBT 类型 电压 - 集电极发射极击穿(最大值) 电流 - 集电极 (Ic)(最大值) 电流 - 集电极脉冲 (Icm) 导通电压 (Vce(on))(最大值)@ Vge, Ic 功率 - 最大值 开关能量 输入类型 栅极电荷 导通/关断时间 (Td) @ 25°C 测试条件 反向恢复时间 (trr) 工作温度 等级 认证 安装类型 供应商设备封装

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    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 IGBT 类型 电压 - 集电极发射极击穿(最大值) 电流 - 集电极 (Ic)(最大值) 电流 - 集电极脉冲 (Icm) 导通电压 (Vce(on))(最大值)@ Vge, Ic 功率 - 最大值 开关能量 输入类型 栅极电荷 导通/关断时间 (Td) @ 25°C 测试条件 反向恢复时间 (trr) 工作温度 等级 认证 安装类型 供应商设备封装
    APT40GP60BG

    APT40GP60BG

    IGBT PT 600V 100A TO247

    Microchip Technology

    9,603
    APT40GP60BG

    规格书

    POWER MOS 7® TO-247-3 Tube Active PT 600 V 100 A 160 A 2.7V @ 15V, 40A 543 W 385µJ (on), 352µJ (off) Standard 135 nC 20ns/64ns 400V, 40A, 5Ohm, 15V - -55°C ~ 150°C (TJ) - - Through Hole TO-247 [B]
    APT40GP60B2DQ2G

    APT40GP60B2DQ2G

    IGBT PT 600V 100A

    Microchip Technology

    8,713
    APT40GP60B2DQ2G

    规格书

    POWER MOS 7® TO-247-3 Variant Tube Active PT 600 V 100 A 160 A 2.7V @ 15V, 40A 543 W 385µJ (on), 350µJ (off) Standard 135 nC 20ns/64ns 400V, 40A, 5Ohm, 15V - -55°C ~ 150°C (TJ) - - Through Hole -
    APT70GR120L

    APT70GR120L

    IGBT NPT 1200V 160A TO264

    Microchip Technology

    4,755
    APT70GR120L

    规格书

    - TO-264-3, TO-264AA Tube Active NPT 1200 V 160 A 280 A 3.2V @ 15V, 70A 961 W 3.82mJ (on), 2.58mJ (off) Standard 544 nC 33ns/278ns 600V, 70A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) - - Through Hole TO-264
    APT70GR120B2

    APT70GR120B2

    IGBT NPT 1200V 160A TO247

    Microchip Technology

    3,639
    APT70GR120B2

    规格书

    - TO-247-3 Tube Active NPT 1200 V 160 A 280 A 3.2V @ 15V, 70A 961 W 3.82mJ (on), 2.58mJ (off) Standard 544 nC 33ns/278ns 600V, 70A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) - - Through Hole TO-247
    IXXX140N65B4H1

    IXXX140N65B4H1

    IGBT

    IXYS

    9,932
    IXXX140N65B4H1

    规格书

    XPT™, GenX4™ TO-247-3 Variant Tube Active - 650 V 340 A 840 A 1.9V @ 15V, 120A 1200 W 5.75mJ (on), 2.67mJ (off) Standard 250 nC 54ns/270ns 400V, 100A, 4.7Ohm, 15V 105 ns -55°C ~ 175°C (TJ) - - Through Hole PLUS247™-3
    IXYX100N65B3D1

    IXYX100N65B3D1

    IGBT PT 650V 225A PLUS247-3

    IXYS

    4,742
    IXYX100N65B3D1

    规格书

    GenX3™, XPT™ TO-247-3 Variant Tube Obsolete PT 650 V 225 A 460 A 1.85V @ 15V, 70A 830 W 1.27mJ (on), 1.37mJ (off) Standard 168 nC 29ns/150ns 400V, 50A, 3Ohm, 15V 156 ns -55°C ~ 175°C (TJ) - - Through Hole PLUS247™-3
    IXXK200N60B3

    IXXK200N60B3

    IGBT 600V 380A 1630W TO264

    IXYS

    7,913
    IXXK200N60B3

    规格书

    GenX3™, XPT™ TO-264-3, TO-264AA Tube Active PT 600 V 380 A 900 A 1.7V @ 15V, 100A 1630 W 2.85mJ (on), 2.9mJ (off) Standard 315 nC 48ns/160ns 360V, 100A, 1Ohm, 15V - -55°C ~ 175°C (TJ) - - Through Hole TO-264 (IXXK)
    IXBT2N250-TR

    IXBT2N250-TR

    IGBT 2500V 5A TO268

    IXYS

    7,342
    IXBT2N250-TR

    规格书

    BIMOSFET™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active - 2500 V 5 A 13 A 3.5V @ 15V, 2A 32 W - Standard 10.6 nC 30ns/70ns 2000V, 2A, 47Ohm, 15V 920 ns -55°C ~ 150°C (TJ) - - Surface Mount TO-268
    IXBT42N170-TRL

    IXBT42N170-TRL

    IGBT 1700V 80A TO268

    IXYS

    2,970
    IXBT42N170-TRL

    规格书

    BIMOSFET™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active - 1700 V 80 A 300 A 2.8V @ 15V, 42A 360 W - Standard 188 nC 37ns/340ns 850V, 42A, 10Ohm, 15V - - - - Surface Mount TO-268
    APT50GP60B2DQ2G

    APT50GP60B2DQ2G

    IGBT PT 600V 150A

    Microchip Technology

    6,824
    APT50GP60B2DQ2G

    规格书

    POWER MOS 7® TO-247-3 Variant Tube Active PT 600 V 150 A 190 A 2.7V @ 15V, 50A 625 W 465µJ (on), 635µJ (off) Standard 165 nC 19ns/85ns 400V, 50A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) - - Through Hole -
    IXYK30N170CV1

    IXYK30N170CV1

    DISC IGBT XPT-HI VOLTAGE TO-264(

    IXYS

    7,212
    IXYK30N170CV1

    规格书

    XPT™ TO-264-3, TO-264AA Tube Active PT 1700 V 100 A 250 A 4V @ 15V, 30A 937 W 3.6mJ (on), 1.8mJ (off) Standard 150 nC 16ns/143ns 850V, 30A, 2.7Ohm, 15V 33 ns -55°C ~ 175°C (TJ) - - Through Hole TO-264 (IXYK)
    IXGX50N60AU1

    IXGX50N60AU1

    IGBT 600V 75A 300W TO247

    IXYS

    5,589
    IXGX50N60AU1

    规格书

    HiPerFAST™ TO-247-3 Tube Obsolete - 600 V 75 A 200 A 2.7V @ 15V, 50A 300 W 4.8mJ (off) Standard 200 nC 50ns/200ns 480V, 50A, 2.7Ohm, 15V 50 ns -55°C ~ 150°C (TJ) - - Through Hole TO-247AD
    IXBT24N170

    IXBT24N170

    IGBT 1700V 60A TO268AA

    IXYS

    4,307
    IXBT24N170

    规格书

    BIMOSFET™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active - 1700 V 60 A 230 A 2.5V @ 15V, 24A 250 W - Standard 140 nC - - 1.06 µs -55°C ~ 150°C (TJ) - - Surface Mount TO-268AA
    IXGX55N120A3H1

    IXGX55N120A3H1

    IGBT 1200V 125A 460W PLUS247

    IXYS

    2,769
    IXGX55N120A3H1

    规格书

    GenX3™ TO-247-3 Variant Tube Active PT 1200 V 125 A 400 A 2.3V @ 15V, 55A 460 W 5.1mJ (on), 13.3mJ (off) Standard 185 nC 23ns/365ns 960V, 55A, 3Ohm, 15V 200 ns - - - Through Hole PLUS247™-3
    APT50GS60BRDQ2G

    APT50GS60BRDQ2G

    IGBT NPT 600V 93A TO247

    Microchip Technology

    6,927
    APT50GS60BRDQ2G

    规格书

    Thunderbolt IGBT® TO-247-3 Tube Active NPT 600 V 93 A 195 A 3.15V @ 15V, 50A 415 W 755µJ (off) Standard 235 nC 16ns/225ns 400V, 40A, 4.7Ohm, 15V 25 ns -55°C ~ 150°C (TJ) - - Through Hole TO-247 [B]
    APT102GA60L

    APT102GA60L

    IGBT PT 600V 183A TO264

    Microchip Technology

    8,325
    APT102GA60L

    规格书

    - TO-264-3, TO-264AA Tube Active PT 600 V 183 A 307 A 2.5V @ 15V, 62A 780 W 1.354mJ (on), 1.614mJ (off) Standard 294 nC 28ns/212ns 400V, 62A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) - - Through Hole TO-264 [L]
    APT102GA60B2

    APT102GA60B2

    IGBT 600V 183A 780W TO247

    Microchip Technology

    2,847
    APT102GA60B2

    规格书

    POWER MOS 8™ TO-247-3 Variant Tube Obsolete PT 600 V 183 A 307 A 2.5V @ 15V, 62A 780 W 1.354mJ (on), 1.614mJ (off) Standard 294 nC 28ns/212ns 400V, 62A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) - - Through Hole -
    APT80GA90LD40

    APT80GA90LD40

    IGBT PT 900V 145A TO264

    Microchip Technology

    3,262
    APT80GA90LD40

    规格书

    POWER MOS 8™ TO-264-3, TO-264AA Tube Active PT 900 V 145 A 239 A 3.1V @ 15V, 47A 625 W 1652µJ (on), 1389µJ (off) Standard 200 nC 18ns/149ns 600V, 47A, 4.7Ohm, 15V 25 ns - - - Through Hole TO-264
    IGC70T120T8RQ

    IGC70T120T8RQ

    IGBT 1200V 75A DIE

    Infineon Technologies

    5,766
    IGC70T120T8RQ

    规格书

    - Die Bulk Discontinued at Digi-Key Trench Field Stop 1200 V - 225 A 2.42V @ 15V, 75A - - Standard - - - - - - - Surface Mount Die
    IXGR24N120C3D1

    IXGR24N120C3D1

    IGBT 1200V 48A 200W ISOPLUS247

    IXYS

    9,046
    IXGR24N120C3D1

    规格书

    GenX3™ TO-247-3 Tube Active PT 1200 V 48 A 96 A 4.2V @ 15V, 20A 200 W 1.37mJ (on), 470µJ (off) Standard 79 nC 16ns/93ns 600V, 20A, 5Ohm, 15V 220 ns -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS247™
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