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    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 二极管配置 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流 (Io)(每个二极管) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 工作温度 - 结点 等级 认证 安装类型 供应商设备封装
    VS-U5FX120FA60

    VS-U5FX120FA60

    DIODE MODULE GP 600V 60A SOT-227

    Vishay General Semiconductor - Diodes Division

    154
    VS-U5FX120FA60

    规格书

    FRED Pt® SOT-227-4, miniBLOC Tube Active 2 Independent Standard 600 V 60A (DC) 2.2 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 63 ns 40 µA @ 600 V -55°C ~ 175°C - - Chassis Mount SOT-227
    VS-U5FH150FA60

    VS-U5FH150FA60

    DIODE MODULE GP 600V 75A SOT-227

    Vishay General Semiconductor - Diodes Division

    160
    VS-U5FH150FA60

    规格书

    FRED Pt® SOT-227-4, miniBLOC Tube Active 2 Independent Standard 600 V 75A (DC) 1.7 V @ 75 A Fast Recovery =< 500ns, > 200mA (Io) 70 ns 50 µA @ 600 V -55°C ~ 175°C - - Chassis Mount SOT-227
    VS-U5FX150FA60

    VS-U5FX150FA60

    DIODE MODULE GP 600V 75A SOT-227

    Vishay General Semiconductor - Diodes Division

    126
    VS-U5FX150FA60

    规格书

    FRED Pt® SOT-227-4, miniBLOC Tube Active 2 Independent Standard 600 V 75A (DC) 2.2 V @ 75 A Fast Recovery =< 500ns, > 200mA (Io) 65 ns 50 µA @ 600 V -55°C ~ 175°C - - Chassis Mount SOT-227
    PCDH40120CCG1_T0_00601

    PCDH40120CCG1_T0_00601

    DIODE ARR SIC 1200V 20A TO-247AD

    Panjit International Inc.

    1,500
    PCDH40120CCG1_T0_00601

    规格书

    - TO-247-3 Tube Active 1 Pair Common Cathode SiC (Silicon Carbide) Schottky 1200 V 20A (DC) 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 180 µA @ 1200 V -55°C ~ 175°C - - Through Hole TO-247AD
    IV1D12040U2

    IV1D12040U2

    DIODE ARR SIC 1200V 102A TO2472

    Inventchip

    120
    IV1D12040U2

    规格书

    - TO-247-2 Tube Active 1 Pair Common Cathode SiC (Silicon Carbide) Schottky 1200 V 102A (DC) 1.8 V @ 40 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V -55°C ~ 175°C - - Through Hole TO-247-2
    1N4148UBCA/TR

    1N4148UBCA/TR

    DIODE ARRAY GP 75V 200MA UB

    Microchip Technology

    200
    1N4148UBCA/TR

    规格书

    - 3-SMD, No Lead Tape & Reel (TR) Active 1 Pair Common Anode Standard 75 V 200mA 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 5 ns 500 nA @ 75 V -65°C ~ 200°C - - Surface Mount UB
    1N4148UBD

    1N4148UBD

    DIODE ARRAY GP 75V 200MA UB

    Microchip Technology

    151
    1N4148UBD

    规格书

    - 3-SMD, No Lead Bulk Active 1 Pair Series Connection Standard 75 V 200mA 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 5 ns 500 nA @ 75 V -65°C ~ 200°C - - Surface Mount UB
    RJS6004WDPK-00#T0

    RJS6004WDPK-00#T0

    DIODE ARRAY SIC 600V 10A TO-3P

    Renesas Electronics Corporation

    750
    RJS6004WDPK-00#T0

    规格书

    - TO-220-3 Full Pack Bulk Active 1 Pair Common Cathode SiC (Silicon Carbide) Schottky 600 V 10A (DC) 1.8 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 15 ns 10 µA @ 600 V -55°C ~ 150°C - - Through Hole TO-3P
    GB2X50MPS12-227

    GB2X50MPS12-227

    DIODE MOD SIC 1200V 93A SOT-227

    GeneSiC Semiconductor

    248
    GB2X50MPS12-227

    规格书

    SiC Schottky MPS™ SOT-227-4, miniBLOC Tube Obsolete 2 Independent SiC (Silicon Carbide) Schottky 1200 V 93A (DC) 1.8 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 1200 V -55°C ~ 175°C - - Chassis Mount SOT-227
    DCG45X1200NA

    DCG45X1200NA

    DIODE MOD SIC 1200V 22A SOT227B

    IXYS

    196
    DCG45X1200NA

    规格书

    - SOT-227-4, miniBLOC Tube Obsolete 2 Independent SiC (Silicon Carbide) Schottky 1200 V 22A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V -40°C ~ 175°C - - Chassis Mount SOT-227B
    GB2X50MPS17-227

    GB2X50MPS17-227

    DIODE MOD SIC 1700V 136A SOT-227

    GeneSiC Semiconductor

    4,758
    GB2X50MPS17-227

    规格书

    SiC Schottky MPS™ SOT-227-4, miniBLOC Tube Obsolete 2 Independent SiC (Silicon Carbide) Schottky 1700 V 136A (DC) 1.8 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 1700 V -55°C ~ 175°C - - Chassis Mount SOT-227
    MBRT20060R

    MBRT20060R

    DIODE MOD SCHOTT 60V 100A 3TOWER

    GeneSiC Semiconductor

    1,056
    MBRT20060R

    规格书

    - Three Tower Bulk Active 1 Pair Common Anode Schottky 60 V 100A 800 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
    MUR20020CT

    MUR20020CT

    DIODE MODULE GP 200V 100A 2TOWER

    GeneSiC Semiconductor

    3,409
    MUR20020CT

    规格书

    - Twin Tower Bulk Active 1 Pair Common Cathode Standard 200 V 100A 1.3 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Twin Tower
    DDB6U85N16LHOSA1

    DDB6U85N16LHOSA1

    DIODE MODULE GP 1600V AGISOPACK1

    Infineon Technologies

    2,146
    DDB6U85N16LHOSA1

    规格书

    - Module Bulk Obsolete 3 Independent Standard 1600 V 60A 1.44 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 5 mA @ 1600 V 150°C (Max) - - Chassis Mount AG-ISOPACK-1
    MD165A16D2-BP

    MD165A16D2-BP

    DIODE MODULE GP 1600V 165A D2

    Micro Commercial Co

    4,275
    MD165A16D2-BP

    规格书

    - D2 Bulk Active 1 Pair Common Anode Standard 1600 V 165A 1.4 V @ 300 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 1600 V -40°C ~ 150°C - - Chassis Mount D2
    MSCDC150KK70D1PAG

    MSCDC150KK70D1PAG

    DIODE MODULE SIC 700V 150A D1P

    Microchip Technology

    3,050
    MSCDC150KK70D1PAG

    规格书

    - Module Box Active 1 Pair Common Cathode SiC (Silicon Carbide) Schottky 700 V 150A 1.8 V @ 150 A No Recovery Time > 500mA (Io) 0 ns 600 µA @ 700 V -40°C ~ 175°C - - Chassis Mount D1P
    DCG130X1200NA

    DCG130X1200NA

    DIODE MOD SIC 1200V 64A SOT227B

    IXYS

    335
    DCG130X1200NA

    规格书

    - SOT-227-4, miniBLOC Tube Obsolete 2 Independent SiC (Silicon Carbide) Schottky 1200 V 64A 1.8 V @ 60 A No Recovery Time > 500mA (Io) 0 ns 800 µA @ 1200 V -40°C ~ 175°C - - Chassis Mount SOT-227B
    JANTX1N6511

    JANTX1N6511

    DIODE ARRAY GP 75V 300MA 14-CDIP

    Microchip Technology

    4,990
    JANTX1N6511

    规格书

    - 14-CDIP (0.300", 7.62mm) Bulk Active 7 Independent Standard 75 V 300mA (DC) 1 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 10 ns 100 nA @ 40 V - Military MIL-PRF-19500/4 Through Hole 14-CDIP
    DD400S33K2CNOSA1

    DD400S33K2CNOSA1

    DIODE MODULE GP 3300V AIHV130-3

    Infineon Technologies

    9,416
    DD400S33K2CNOSA1

    规格书

    - Module Bulk Obsolete 2 Independent Standard 3300 V - 3.5 V @ 400 A Standard Recovery >500ns, > 200mA (Io) - - -40°C ~ 125°C - - Chassis Mount A-IHV130-3
    DD800S33K2CNOSA1

    DD800S33K2CNOSA1

    DIODE MODULE GP 3300V AIHV130-3

    Infineon Technologies

    6,254
    DD800S33K2CNOSA1

    规格书

    - Module Bulk Obsolete 2 Independent Standard 3300 V - 3.5 V @ 800 A Standard Recovery >500ns, > 200mA (Io) - - -40°C ~ 125°C - - Chassis Mount A-IHV130-3
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