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    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
    VI30100SHM3/4W

    VI30100SHM3/4W

    DIODE SCHOTTKY 100V 30A TO262AA

    Vishay General Semiconductor - Diodes Division

    3,598
    VI30100SHM3/4W

    规格书

    - TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete Schottky 100 V 30A 910 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 100 V - Automotive AEC-Q101 Through Hole TO-262AA -40°C ~ 150°C
    VI40100GHM3/4W

    VI40100GHM3/4W

    DIODE SCHOTTKY 100V 20A TO262AA

    Vishay General Semiconductor - Diodes Division

    3,608
    VI40100GHM3/4W

    规格书

    - TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete Schottky 100 V 20A 810 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 100 V - Automotive AEC-Q101 Through Hole TO-262AA -40°C ~ 150°C
    VIT760HM3/4W

    VIT760HM3/4W

    DIODE SCHOTTKY 60V 7.5A TO262AA

    Vishay General Semiconductor - Diodes Division

    5,244
    VIT760HM3/4W

    规格书

    - TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete Schottky 60 V 7.5A 800 mV @ 7.5 A Fast Recovery =< 500ns, > 200mA (Io) - 700 µA @ 60 V - Automotive AEC-Q101 Through Hole TO-262AA -55°C ~ 150°C
    FMCA-11065

    FMCA-11065

    DIODE SIL CARB 600V 10A TO220F

    Sanken Electric USA Inc.

    5,398
    FMCA-11065

    规格书

    - TO-220-2 Full Pack Tube Obsolete SiC (Silicon Carbide) Schottky 600 V 10A 1.5 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 15 µA @ 600 V - - - Through Hole TO-220F-2L -40°C ~ 175°C
    JAN1N457

    JAN1N457

    DIODE GEN PURP 70V 150MA DO35

    Microchip Technology

    9,259
    JAN1N457

    规格书

    - DO-204AH, DO-35, Axial Bulk Active Standard 70 V 150mA 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 25 nA @ 70 V - Military MIL-PRF-19500/193 Through Hole DO-204AH (DO-35) -65°C ~ 150°C
    JAN1N458

    JAN1N458

    DIODE GEN PURP 70V 150MA DO35

    Microchip Technology

    4,102
    JAN1N458

    规格书

    - DO-204AH, DO-35, Axial Bulk Active Standard 70 V 150mA 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 25 nA @ 70 V - Military MIL-PRF-19500/193 Through Hole DO-204AH (DO-35) -65°C ~ 150°C
    JANTX1N3164

    JANTX1N3164

    DIODE GP 200V 300A DO205AB DO9

    Microchip Technology

    6,733
    JANTX1N3164

    规格书

    - DO-205AB, DO-9, Stud Bulk Active Standard 200 V 300A 1.55 V @ 940 A Fast Recovery =< 500ns, > 200mA (Io) - 10 mA @ 200 V - Military MIL-PRF-19500/211 Chassis, Stud Mount DO-205AB (DO-9) -65°C ~ 200°C
    JANTX1N3289

    JANTX1N3289

    DIODE GEN PURP 200V 100A DO205AA

    Microchip Technology

    3,361
    JANTX1N3289

    规格书

    - DO-205AA, DO-8, Stud Bulk Active Standard 200 V 100A 1.55 V @ 310 A Fast Recovery =< 500ns, > 200mA (Io) - 10 mA @ 200 V - Military MIL-PRF-19500/246 Stud Mount DO-205AA (DO-8) -65°C ~ 200°C
    JANTX1N485B

    JANTX1N485B

    DIODE GEN PURP 180V 200MA DO35

    Microchip Technology

    2,606
    JANTX1N485B

    规格书

    - DO-204AH, DO-35, Axial Bulk Active Standard 180 V 200mA 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 25 nA @ 180 V - Military MIL-PRF-19500/118 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
    JANTX1N486B

    JANTX1N486B

    DIODE GEN PURP 225V 200MA DO35

    Microchip Technology

    8,945
    JANTX1N486B

    规格书

    - DO-204AH, DO-35, Axial Bulk Active Standard 225 V 200mA 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 25 nA @ 225 V - Military MIL-PRF-19500/118 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
    JANTX1N5194

    JANTX1N5194

    DIODE GEN PURP 70V 50MA DO35

    Microchip Technology

    2,908
    JANTX1N5194

    规格书

    - DO-204AH, DO-35, Axial Bulk Active Standard 70 V 50mA 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 25 nA @ 70 V - Military MIL-PRF-19500/118 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
    JANTX1N6761-1

    JANTX1N6761-1

    DIODE SCHOTTKY 100V 1A DO41

    Microchip Technology

    9,707
    JANTX1N6761-1

    规格书

    - DO-204AL, DO-41, Axial Bulk Active Schottky 100 V 1A 690 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 100 V 70pF @ 5V, 1MHz Military MIL-PRF-19500/586 Through Hole DO-41 -65°C ~ 150°C
    JANTX1N6857-1

    JANTX1N6857-1

    DIODE SCHOTTKY 20V 150MA DO35

    Microchip Technology

    5,813
    JANTX1N6857-1

    规格书

    - DO-204AH, DO-35, Axial Bulk Active Schottky 20 V 150mA 350 mV @ 1 mA Small Signal =< 200mA (Io), Any Speed - 150 nA @ 16 V - Military MIL-PRF-19500/444 Through Hole DO-204AH (DO-35) -65°C ~ 150°C
    JANTXV1N645-1

    JANTXV1N645-1

    DIODE GEN PURP 225V 400MA DO35

    Microchip Technology

    5,941
    JANTXV1N645-1

    规格书

    - DO-204AH, DO-35, Axial Bulk Active Standard 225 V 400mA 1 V @ 400 mA Fast Recovery =< 500ns, > 200mA (Io) - 50 nA @ 225 V - Military MIL-PRF-19500/240 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
    JANTXV1N6492

    JANTXV1N6492

    DIODE SCHOTTKY 45V 3.6A TO205AF

    Microchip Technology

    2,270
    JANTXV1N6492

    规格书

    - TO-205AF Metal Can Bulk Active Schottky 45 V 3.6A 560 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 2 mA @ 45 V 450pF @ 5V, 1MHz Military MIL-PRF-19500/567 Through Hole TO-205AF (TO-39) -65°C ~ 175°C
    JANTXV1N6677UR-1

    JANTXV1N6677UR-1

    DIODE SCHOTTKY 40V 200MA DO213AA

    Microchip Technology

    7,526
    JANTXV1N6677UR-1

    规格书

    - DO-213AA Bulk Active Schottky 40 V 200mA 500 mV @ 200 mA Small Signal =< 200mA (Io), Any Speed - 5 µA @ 40 V 50pF @ 0V, 1MHz Military MIL-PRF-19500/610 Surface Mount DO-213AA -65°C ~ 125°C
    JANTXV1N6858UR-1

    JANTXV1N6858UR-1

    DIODE SCHOTTKY 70V 75MA DO213AA

    Microchip Technology

    4,821
    JANTXV1N6858UR-1

    规格书

    - DO-213AA Bulk Active Schottky 70 V 75mA 650 mV @ 15 mA Small Signal =< 200mA (Io), Any Speed - 200 nA @ 50 V 4.5pF @ 0V, 1MHz Military MIL-PRF-19500/444 Surface Mount DO-213AA -65°C ~ 150°C
    MC5616

    MC5616

    DIODE GP 3KV 570MA S AXIAL

    Microsemi Corporation

    7,525
    MC5616

    规格书

    - S, Axial Bulk Active Standard 3000 V 570mA 6 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 300 ns 1 µA @ 3000 V - - - Through Hole S, Axial -65°C ~ 150°C
    VS-1N2160

    VS-1N2160

    DIODE MED POWER RECT DO-203AB

    Vishay General Semiconductor - Diodes Division

    5,165
    VS-1N2160

    规格书

    * - Bulk Active - - - - - - - - - - - - -
    VS-20MQ040NPBF

    VS-20MQ040NPBF

    DIODE SCHOTTKY 40V 2.1A DO214AC

    Vishay General Semiconductor - Diodes Division

    9,249
    VS-20MQ040NPBF

    规格书

    - DO-214AC, SMA Bulk Obsolete Schottky 40 V 2.1A 690 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 40 V - - - Surface Mount DO-214AC (SMA) -55°C ~ 150°C
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