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    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
    GB02SHT01-46

    GB02SHT01-46

    DIODE SIL CARBIDE 100V 4A TO46

    GeneSiC Semiconductor

    6,492
    GB02SHT01-46

    规格书

    - TO-206AB, TO-46-3 Metal Can Bulk Obsolete SiC (Silicon Carbide) Schottky 100 V 4A 1.6 V @ 1 A No Recovery Time > 500mA (Io) 0 ns 5 µA @ 100 V 76pF @ 1V, 1MHz - - Through Hole TO-46 -55°C ~ 210°C
    VS-1EFH01WHM3-18

    VS-1EFH01WHM3-18

    DIODE GEN PURP 100V 1A DO219AB

    Vishay General Semiconductor - Diodes Division

    3,717
    VS-1EFH01WHM3-18

    规格书

    FRED Pt® DO-219AB Tape & Reel (TR) Obsolete Standard 100 V 1A 930 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 16 ns 2 µA @ 100 V - Automotive AEC-Q101 Surface Mount DO-219AB (SMF) -65°C ~ 175°C
    VS-1EFH01W-M3-18

    VS-1EFH01W-M3-18

    DIODE GEN PURP 100V 1A DO219AB

    Vishay General Semiconductor - Diodes Division

    5,109
    VS-1EFH01W-M3-18

    规格书

    FRED Pt® DO-219AB Tape & Reel (TR) Obsolete Standard 100 V 1A 930 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 16 ns 2 µA @ 100 V - - - Surface Mount DO-219AB (SMF) -65°C ~ 175°C
    VS-1EFH02W-M3-18

    VS-1EFH02W-M3-18

    DIODE GEN PURP 200V 1A DO219AB

    Vishay General Semiconductor - Diodes Division

    4,394
    VS-1EFH02W-M3-18

    规格书

    FRED Pt® DO-219AB Tape & Reel (TR) Obsolete Standard 200 V 1A 930 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 16 ns 2 µA @ 200 V - - - Surface Mount DO-219AB (SMF) -65°C ~ 175°C
    BYC8B-600PQP

    BYC8B-600PQP

    DIODE GEN PURP 600V 8A D2PAK

    NXP USA Inc.

    4,645
    BYC8B-600PQP

    规格书

    - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 8A 3.4 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 18 ns 20 µA @ 600 V - - - Surface Mount D2PAK 175°C (Max)
    GP2D050A120B

    GP2D050A120B

    DIODE SIL CARB 1.2KV 50A TO247-2

    SemiQ

    8,045
    GP2D050A120B

    规格书

    Amp+™ TO-247-2 Tube Discontinued SiC (Silicon Carbide) Schottky 1200 V 50A 1.8 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 3174pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
    C2D05120E-TR

    C2D05120E-TR

    DIODE SIL CARB 1.2KV 17.5A TO252

    Wolfspeed, Inc.

    8,288
    C2D05120E-TR

    规格书

    Zero Recovery™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 1200 V 17.5A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 455pF @ 0V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
    GP2D003A065A

    GP2D003A065A

    DIODE SIL CARB 650V 3A TO220-2

    SemiQ

    7,306
    GP2D003A065A

    规格书

    Amp+™ TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 3A 1.65 V @ 3 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 650 V 158pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
    GP2D005A120A

    GP2D005A120A

    DIODE SIL CARB 1.2KV 5A TO220-2

    SemiQ

    9,665
    GP2D005A120A

    规格书

    Amp+™ TO-220-2 Tube Discontinued SiC (Silicon Carbide) Schottky 1200 V 5A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 1200 V 317pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
    GP2D005A120C

    GP2D005A120C

    DIODE SIL CARB 1.2KV 5A TO252-2L

    SemiQ

    8,410
    GP2D005A120C

    规格书

    Amp+™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued SiC (Silicon Carbide) Schottky 1200 V 5A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 1200 V 317pF @ 1V, 1MHz - - Surface Mount TO-252-2L (DPAK) -55°C ~ 175°C
    GP2D005A170B

    GP2D005A170B

    DIODE SIL CARB 1.7KV 5A TO247-2

    SemiQ

    3,053
    GP2D005A170B

    规格书

    Amp+™ TO-247-2 Tube Discontinued SiC (Silicon Carbide) Schottky 1700 V 5A 1.75 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 1700 V 406pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
    GP2D006A065A

    GP2D006A065A

    DIODE SIL CARB 650V 6A TO220-2

    SemiQ

    4,038
    GP2D006A065A

    规格书

    Amp+™ TO-220-2 Tube Discontinued SiC (Silicon Carbide) Schottky 650 V 6A 1.65 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 316pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
    GP2D006A065C

    GP2D006A065C

    DIODE SIL CARB 650V 6A TO252-2L

    SemiQ

    9,030
    GP2D006A065C

    规格书

    Amp+™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued SiC (Silicon Carbide) Schottky 650 V 6A 1.65 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 316pF @ 1V, 1MHz - - Surface Mount TO-252-2L (DPAK) -55°C ~ 175°C
    GP2D010A120A

    GP2D010A120A

    DIODE SIL CARB 1.2KV 10A TO220-2

    SemiQ

    7,035
    GP2D010A120A

    规格书

    Amp+™ TO-220-2 Tube Discontinued SiC (Silicon Carbide) Schottky 1200 V 10A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1200 V 635pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
    GP2D010A120B

    GP2D010A120B

    DIODE SIL CARB 1.2KV 10A TO247-2

    SemiQ

    6,089
    GP2D010A120B

    规格书

    Amp+™ TO-247-2 Tube Discontinued SiC (Silicon Carbide) Schottky 1200 V 10A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1200 V 635pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
    GP2D010A120C

    GP2D010A120C

    DIODE SIL CARB 1.2KV 10A TO252L

    SemiQ

    7,338
    GP2D010A120C

    规格书

    Amp+™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued SiC (Silicon Carbide) Schottky 1200 V 10A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1200 V 635pF @ 1V, 1MHz - - Surface Mount TO-252 (DPAK) -55°C ~ 175°C
    GP2D010A170B

    GP2D010A170B

    DIODE SIL CARB 1.7KV 10A TO247-2

    SemiQ

    8,424
    GP2D010A170B

    规格书

    Amp+™ TO-247-2 Tube Discontinued SiC (Silicon Carbide) Schottky 1700 V 10A 1.75 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1700 V 812pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
    GP2D020A120B

    GP2D020A120B

    DIODE SIL CARB 1.2KV 20A TO247-2

    SemiQ

    2,108
    GP2D020A120B

    规格书

    Amp+™ TO-247-2 Tube Discontinued SiC (Silicon Carbide) Schottky 1200 V 20A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 1200 V 1270pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
    GP2D020A170B

    GP2D020A170B

    DIODE SIL CARB 1.7KV 20A TO247-2

    SemiQ

    7,267
    GP2D020A170B

    规格书

    Amp+™ TO-247-2 Tube Discontinued SiC (Silicon Carbide) Schottky 1700 V 20A 1.75 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 1700 V 1624pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
    GP2D030A120B

    GP2D030A120B

    DIODE SIL CARB 1.2KV 30A TO247-2

    SemiQ

    4,014
    GP2D030A120B

    规格书

    Amp+™ TO-247-2 Tube Discontinued SiC (Silicon Carbide) Schottky 1200 V 30A 1.8 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 1200 V 1905pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
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