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    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
    LFUSCD20065B

    LFUSCD20065B

    DIODE SIL CARB 650V 20A TO247AD

    Littelfuse Inc.

    7,813
    LFUSCD20065B

    规格书

    - TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 500 µA @ 650 V 580pF @ 1V, 1MHz - - Through Hole TO-247AD 175°C (Max)
    IDC51D120T6MX1SA3

    IDC51D120T6MX1SA3

    DIODE GP 1.2KV 100A WAFER

    Infineon Technologies

    7,346
    IDC51D120T6MX1SA3

    规格书

    - Die Bulk Active Standard 1200 V 100A 2.05 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 18 µA @ 1200 V - - - Surface Mount Sawn on foil -40°C ~ 175°C
    SIDC06D120H8X1SA2

    SIDC06D120H8X1SA2

    DIODE GP 1.2KV 7.5A WAFER

    Infineon Technologies

    3,294
    SIDC06D120H8X1SA2

    规格书

    - Die Bulk Active Standard 1200 V 7.5A 1.97 V @ 7.5 A Standard Recovery >500ns, > 200mA (Io) - 27 µA @ 1200 V - - - Surface Mount Sawn on foil -40°C ~ 175°C
    SIDC08D120H8X1SA1

    SIDC08D120H8X1SA1

    DIODE GEN PURP 1.2KV 150A WAFER

    Infineon Technologies

    8,432
    SIDC08D120H8X1SA1

    规格书

    - - Bulk Active Standard 1200 V 150A 1.41 V @ 45 A Standard Recovery >500ns, > 200mA (Io) - 27 µA @ 1200 V - - - - - -40°C ~ 175°C
    SIDC81D120H8X1SA3

    SIDC81D120H8X1SA3

    DIODE GEN PURP 1.2KV 150A WAFER

    Infineon Technologies

    6,278
    SIDC81D120H8X1SA3

    规格书

    - - Bulk Active Standard 1200 V 150A 2.15 V @ 150 A Standard Recovery >500ns, > 200mA (Io) - 27 µA @ 1200 V - - - - - -40°C ~ 175°C
    IRD3CH101DB6

    IRD3CH101DB6

    DIODE GEN PURP 1.2KV 200A DIE

    Infineon Technologies

    4,094
    IRD3CH101DB6

    规格书

    - Die Bulk Obsolete Standard 1200 V 200A 2.7 V @ 200 A Fast Recovery =< 500ns, > 200mA (Io) 360 ns 100 µA @ 1200 V - - - Surface Mount Die -40°C ~ 175°C
    IRD3CH11DF6

    IRD3CH11DF6

    DIODE CHIP EMITTER CONTROLLED

    Infineon Technologies

    7,637
    IRD3CH11DF6

    规格书

    - - Bulk Obsolete - - - - - - - - - - - - -
    IRD3CH16DF6

    IRD3CH16DF6

    DIODE CHIP EMITTER CONTROLLED

    Infineon Technologies

    7,905
    IRD3CH16DF6

    规格书

    - - Bulk Obsolete - - - - - - - - - - - - -
    IRD3CH24DF6

    IRD3CH24DF6

    DIODE CHIP EMITTER CONTROLLED

    Infineon Technologies

    6,613
    IRD3CH24DF6

    规格书

    - - Bulk Obsolete - - - - - - - - - - - - -
    IRD3CH31DF6

    IRD3CH31DF6

    DIODE CHIP EMITTER CONTROLLED

    Infineon Technologies

    7,352
    IRD3CH31DF6

    规格书

    - - Bulk Obsolete - - - - - - - - - - - - -
    IRD3CH53DB6

    IRD3CH53DB6

    DIODE GEN PURP 1.2KV 100A DIE

    Infineon Technologies

    6,919
    IRD3CH53DB6

    规格书

    - Die Bulk Obsolete Standard 1200 V 100A 2.7 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 270 ns 20 µA @ 1200 V - - - Surface Mount Die -40°C ~ 150°C
    IRD3CH53DF6

    IRD3CH53DF6

    DIODE CHIP EMITTER CONTROLLED

    Infineon Technologies

    2,541
    IRD3CH53DF6

    规格书

    - - Bulk Obsolete - - - - - - - - - - - - -
    IRD3CH5DB6

    IRD3CH5DB6

    DIODE GEN PURP 1.2KV 5A DIE

    Infineon Technologies

    5,947
    IRD3CH5DB6

    规格书

    - Die Bulk Obsolete Standard 1200 V 5A 2.7 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 96 ns 100 nA @ 1200 V - - - Surface Mount Die -40°C ~ 150°C
    IRD3CH82DF6

    IRD3CH82DF6

    DIODE CHIP EMITTER CONTROLLED

    Infineon Technologies

    4,112
    IRD3CH82DF6

    规格书

    - - Bulk Obsolete - - - - - - - - - - - - -
    IRD3CH9DB6

    IRD3CH9DB6

    DIODE GEN PURP 1.2KV 10A DIE

    Infineon Technologies

    8,722
    IRD3CH9DB6

    规格书

    - Die Bulk Obsolete Standard 1200 V 10A 2.7 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 154 ns 200 nA @ 1200 V - - - Surface Mount Die -40°C ~ 150°C
    IRD3CH9DF6

    IRD3CH9DF6

    DIODE CHIP EMITTER CONTROLLED

    Infineon Technologies

    5,274
    IRD3CH9DF6

    规格书

    - - Bulk Obsolete - - - - - - - - - - - - -
    FR107

    FR107

    DIODE GEN PURP 1KV 1A DO41

    SMC Diode Solutions

    6,202
    FR107

    规格书

    - DO-204AL, DO-41, Axial Cut Tape (CT) Obsolete Standard 1000 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 5 µA @ 1000 V 15pF @ 4V, 1MHz - - Through Hole DO-41 -65°C ~ 150°C
    BYW76RAS15-10-PH

    BYW76RAS15-10-PH

    DIODE GEN PURP 600V 3A SOD64

    Vishay General Semiconductor - Diodes Division

    5,191
    BYW76RAS15-10-PH

    规格书

    - SOD-64, Axial Tape & Reel (TR) Obsolete Standard 600 V 3A 1 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 5 µA @ 600 V - - - Through Hole SOD-64 -55°C ~ 175°C
    LL101A-13

    LL101A-13

    DIODE SCHOT 60V 30MA SOD80

    Vishay General Semiconductor - Diodes Division

    5,348
    LL101A-13

    规格书

    - DO-213AC, MINI-MELF, SOD-80 Tape & Reel (TR) Obsolete Schottky 60 V 30mA 410 mV @ 1 mA Small Signal =< 200mA (Io), Any Speed 1 ns 200 nA @ 50 V 2pF @ 0V, 1MHz Automotive AEC-Q101 Surface Mount SOD-80 MiniMELF 125°C (Max)
    LL101A-7

    LL101A-7

    DIODE SCHOT 60V 30MA SOD80

    Vishay General Semiconductor - Diodes Division

    9,168
    LL101A-7

    规格书

    - DO-213AC, MINI-MELF, SOD-80 Tape & Reel (TR) Obsolete Schottky 60 V 30mA 410 mV @ 1 mA Small Signal =< 200mA (Io), Any Speed 1 ns 200 nA @ 50 V 2pF @ 0V, 1MHz Automotive AEC-Q101 Surface Mount SOD-80 MiniMELF 125°C (Max)
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