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    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
    JANTXV1N483B

    JANTXV1N483B

    DIODE GEN PURP 70V 200MA DO35

    Microchip Technology

    5,724
    JANTXV1N483B

    规格书

    - DO-204AH, DO-35, Axial Bulk Active Standard 70 V 200mA 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 25 nA @ 60 V - Military MIL-PRF-19500/118 Through Hole DO-204AH (DO-35) 175°C (Max)
    JAN1N1128RA

    JAN1N1128RA

    RECTIFIER

    Microchip Technology

    8,422
    JAN1N1128RA

    规格书

    - DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 600 V - 2.2 V @ 10 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V - Military MIL-PRF-19500/260 Stud Mount DO-203AA (DO-4) -65°C ~ 150°C
    JAN1N6491

    JAN1N6491

    DIODE GEN PURP 600V 400MA DO35

    Microchip Technology

    6,938
    JAN1N6491

    规格书

    - DO-204AH, DO-35, Axial Bulk Active Standard 600 V 400mA 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 50 nA @ 600 V - Military MIL-PRF-19500/406 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
    JAN1N6492

    JAN1N6492

    DIODE SCHOTTKY 45V 3A TO39

    Microchip Technology

    7,426
    JAN1N6492

    规格书

    - TO-205AD, TO-39-3 Metal Can Bulk Active Schottky 45 V 3A 680 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) - 20 mA @ 45 V 450pF @ 5V, 1MHz Military MIL-PRF-19500/567 Through Hole TO-39 (TO-205AD) -65°C ~ 175°C
    JAN1N6763

    JAN1N6763

    DIODE GEN PURP 100V 12A TO254

    Microchip Technology

    6,317
    JAN1N6763

    规格书

    - TO-254-3, TO-254AA Bulk Active Standard 100 V 12A 1.05 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V 300pF @ 5V, 1MHz Military MIL-PRF-19500/642 Through Hole TO-254 -
    JANS1N6864

    JANS1N6864

    DIODE SCHOTTKY 80V 3A B AXIAL

    Microchip Technology

    7,305
    JANS1N6864

    规格书

    - B, Axial Bulk Active Schottky 80 V 3A 700 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 18 mA @ 80 V - Military MIL-PRF-19500/620 Through Hole B, Axial -65°C ~ 125°C
    JANS1N6864US

    JANS1N6864US

    DIODE SCHOTTKY 80V 3A B SQ-MELF

    Microchip Technology

    7,576
    JANS1N6864US

    规格书

    - SQ-MELF, B Bulk Active Schottky 80 V 3A 700 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 150 µA @ 80 V - Military MIL-PRF-19500/620 Surface Mount B, SQ-MELF -65°C ~ 125°C
    JANTX1N3170

    JANTX1N3170

    DIODE GP 600V 300A DO205AB DO9

    Microchip Technology

    5,966
    JANTX1N3170

    规格书

    - DO-205AB, DO-9, Stud Bulk Active Standard 600 V 300A 1.55 V @ 940 A Standard Recovery >500ns, > 200mA (Io) - 10 mA @ 700 V - Military MIL-PRF-19500/211 Stud Mount DO-205AB (DO-9) -65°C ~ 200°C
    JANTX1N6306

    JANTX1N6306

    DIODE GEN PURP 150V 70A DO5

    Microchip Technology

    5,102
    JANTX1N6306

    规格书

    - DO-203AB, DO-5, Stud Bulk Active Standard 150 V 70A 1.18 V @ 150 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 25 µA @ 150 V - Military MIL-PRF-19500/550 Stud Mount DO-5 (DO-203AB) -65°C ~ 175°C
    JANTX1N6765

    JANTX1N6765

    DIODE GEN PURP 200V 12A TO254

    Microchip Technology

    5,613
    JANTX1N6765

    规格书

    - TO-254-3, TO-254AA Bulk Active Standard 200 V 12A 1.05 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V 300pF @ 5V, 1MHz Military MIL-PRF-19500/642 Through Hole TO-254 -
    JANTX1N6864US

    JANTX1N6864US

    DIODE SCHOTTKY 80V 3A B SQ-MELF

    Microchip Technology

    2,758
    JANTX1N6864US

    规格书

    - SQ-MELF, B Bulk Active Schottky 80 V 3A 700 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 150 µA @ 80 V - Military MIL-PRF-19500/620 Surface Mount B, SQ-MELF -65°C ~ 125°C
    JANTXV1N645UR-1

    JANTXV1N645UR-1

    DIODE GP 225V 400MA DO213AA

    Microchip Technology

    2,952
    JANTXV1N645UR-1

    规格书

    - DO-213AA Bulk Active Standard 225 V 400mA 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - - - Military MIL-PRF-19500/240 Surface Mount DO-213AA -65°C ~ 175°C
    JANHCA1N6391

    JANHCA1N6391

    SCHOTTKY RECTIFIER

    Microsemi Corporation

    4,486
    JANHCA1N6391

    规格书

    - DO-203AA, DO-4, Stud Bulk Active Schottky 45 V 22.5A 680 mV @ 50 A Fast Recovery =< 500ns, > 200mA (Io) - 1.5 mA @ 45 V 2000pF @ 5V, 1MHz Military MIL-PRF-19500/553 Stud Mount DO-203AA (DO-4) -55°C ~ 175°C
    JANHCA1N6392

    JANHCA1N6392

    SCHOTTKY RECTIFIER

    Microsemi Corporation

    3,575
    JANHCA1N6392

    规格书

    - DO-203AB, DO-5, Stud Bulk Active Schottky 45 V 54A 820 mV @ 120 A Fast Recovery =< 500ns, > 200mA (Io) - 2 mA @ 45 V 3000pF @ 5V, 1MHz Military MIL-PRF-19500/554 Stud Mount DO-5 (DO-203AB) -55°C ~ 175°C
    MSARS20E060G

    MSARS20E060G

    DIODE GEN PURP 600V 20A G-BODY

    Microchip Technology

    2,417
    MSARS20E060G

    规格书

    - DO-217AA Bulk Active Standard 600 V 20A 1.4 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 5 µA @ 600 V - - - Surface Mount G-Body (DO-217AA) -65°C ~ 175°C
    MSASC100W100HR

    MSASC100W100HR

    DIODE SCHOTT 100V 100A THINKEY1

    Microchip Technology

    7,359
    MSASC100W100HR

    规格书

    - ThinKey™1 Bulk Active Schottky 100 V 100A 950 mV @ 80 A Fast Recovery =< 500ns, > 200mA (Io) - - - - - Surface Mount ThinKey™1 -65°C ~ 175°C
    MSASC150W60L

    MSASC150W60L

    RECTIFIER

    Microchip Technology

    3,547
    MSASC150W60L

    规格书

    - - Bulk Obsolete - - - - - - - - - - - - -
    MSASC75H45F

    MSASC75H45F

    DIODE SCHOTTKY 45V 75A THINKEY4

    Microchip Technology

    9,658
    MSASC75H45F

    规格书

    - ThinKey™4 Bulk Active Schottky 45 V 75A 650 mV @ 75 A Fast Recovery =< 500ns, > 200mA (Io) - 7.5 mA @ 45 V - - - Surface Mount ThinKey™4 -55°C ~ 150°C
    EGF1B-1HE3_A/I

    EGF1B-1HE3_A/I

    DIODE GEN PURP 100V 1A DO214BA

    Vishay General Semiconductor - Diodes Division

    3,650
    EGF1B-1HE3_A/I

    规格书

    Superectifier® DO-214BA Tape & Reel (TR) Active Standard 100 V 1A 1 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 100 V 15pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount DO-214BA (GF1) -65°C ~ 175°C
    EGF1B-1HE3_A/H

    EGF1B-1HE3_A/H

    DIODE GEN PURP 100V 1A DO214BA

    Vishay General Semiconductor - Diodes Division

    3,277
    EGF1B-1HE3_A/H

    规格书

    Superectifier® DO-214BA Tape & Reel (TR) Active Standard 100 V 1A 1 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 100 V 15pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount DO-214BA (GF1) -65°C ~ 175°C
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