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    场效应晶体管(FETs)、MOSFETs

    制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
    FCP190N65S3

    FCP190N65S3

    MOSFET N-CH 650V 17A TO220-3

    onsemi

    750
    FCP190N65S3

    规格书

    SuperFET® III TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 17A (Tc) 10V 190mOhm @ 8.5A, 10V 4.5V @ 1.7mA 33 nC @ 10 V ±30V 1350 pF @ 400 V - 144W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    AOB66616L

    AOB66616L

    MOSFET N-CH 60V 38.5A/140A TO263

    Alpha & Omega Semiconductor Inc.

    570
    AOB66616L

    规格书

    AlphaSGT™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 38.5A (Ta), 140A (Tc) 6V, 10V 3.2mOhm @ 20A, 10V 3.4V @ 250µA 60 nC @ 10 V ±20V 2870 pF @ 30 V - 8.3W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    IRF840LCLPBF

    IRF840LCLPBF

    MOSFET N-CH 500V 8A I2PAK

    Vishay Siliconix

    1,965
    IRF840LCLPBF

    规格书

    - TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole I2PAK
    R6020JNZC17

    R6020JNZC17

    MOSFET N-CH 600V 20A TO3PF

    Rohm Semiconductor

    296
    R6020JNZC17

    规格书

    - TO-3P-3 Full Pack Bag Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 15V 234mOhm @ 10A, 15V 7V @ 3.5mA 45 nC @ 15 V ±30V 1500 pF @ 100 V - 76W (Tc) 150°C (TJ) - - Through Hole TO-3PF
    IPB120N04S402ATMA1

    IPB120N04S402ATMA1

    MOSFET N-CH 40V 120A D2PAK

    Infineon Technologies

    3,008
    IPB120N04S402ATMA1

    规格书

    OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 1.8mOhm @ 100A, 10V 4V @ 110µA 134 nC @ 10 V ±20V 10740 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
    IQE065N10NM5CGATMA1

    IQE065N10NM5CGATMA1

    TRENCH >=100V PG-TTFN-9

    Infineon Technologies

    9,915
    IQE065N10NM5CGATMA1

    规格书

    OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Ta), 85A (Tc) 6V, 10V 6.5mOhm @ 20A, 10V 3.8V @ 48µA 42 nC @ 10 V ±20V 3000 pF @ 50 V - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TTFN-9-1
    PJMP360N60EC_T0_00001

    PJMP360N60EC_T0_00001

    600V SUPER JUNCTION MOSFET

    Panjit International Inc.

    1,980
    PJMP360N60EC_T0_00001

    规格书

    - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 360mOhm @ 5.5A, 10V 4V @ 250µA 18.7 nC @ 10 V ±30V 735 pF @ 400 V - 87.5W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB-L
    IPP77N06S212AKSA2

    IPP77N06S212AKSA2

    MOSFET N-CH 55V 77A TO220-3

    Infineon Technologies

    495
    IPP77N06S212AKSA2

    规格书

    OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 55 V 77A (Tc) 10V 12mOhm @ 38A, 10V 4V @ 93µA 60 nC @ 10 V ±20V 1770 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
    IAUA250N04S6N008AUMA1

    IAUA250N04S6N008AUMA1

    OPTIMOS POWER MOSFET

    Infineon Technologies

    1,950
    IAUA250N04S6N008AUMA1

    规格书

    OptiMOS™ 6 5-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 51A (Ta) 7V, 10V 0.8mOhm @ 100A, 10V 3V @ 90µA 109 nC @ 10 V ±20V 7088 pF @ 25 V - 172W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HSOF-5-1
    IPB160N04S4H1ATMA1

    IPB160N04S4H1ATMA1

    MOSFET N-CH 40V 160A TO263-7

    Infineon Technologies

    770
    IPB160N04S4H1ATMA1

    规格书

    OptiMOS™ TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 10V 1.6mOhm @ 100A, 10V 4V @ 110µA 137 nC @ 10 V ±20V 10920 pF @ 25 V - 167W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-3
    IPA057N08N3GXKSA1

    IPA057N08N3GXKSA1

    MOSFET N-CH 80V 60A TO220-FP

    Infineon Technologies

    440
    IPA057N08N3GXKSA1

    规格书

    OptiMOS™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 80 V 60A (Tc) 6V, 10V 5.7mOhm @ 60A, 10V 3.5V @ 90µA 69 nC @ 10 V ±20V 4750 pF @ 40 V - 39W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-FP
    STP200NF03

    STP200NF03

    MOSFET N-CH 30V 120A TO220AB

    STMicroelectronics

    981
    STP200NF03

    规格书

    STripFET™ III TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 120A (Tc) 10V 3.6mOhm @ 60A, 10V 4V @ 250µA 140 nC @ 10 V ±20V 4950 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
    STD9NM60N

    STD9NM60N

    MOSFET N-CH 600V 6.5A DPAK

    STMicroelectronics

    2,500
    STD9NM60N

    规格书

    MDmesh™ II TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 6.5A (Tc) 10V 745mOhm @ 3.25A, 10V 4V @ 250µA 17.4 nC @ 10 V ±25V 452 pF @ 50 V - 70W (Tc) 150°C (TJ) - - Surface Mount DPAK
    FDP120N10

    FDP120N10

    MOSFET N-CH 100V 74A TO220-3

    onsemi

    226
    FDP120N10

    规格书

    PowerTrench® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 74A (Tc) 10V 12mOhm @ 74A, 10V 4.5V @ 250µA 86 nC @ 10 V ±20V 5605 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
    SIDR390DP-T1-GE3

    SIDR390DP-T1-GE3

    MOSFET N-CH 30V 69.9A/100A PPAK

    Vishay Siliconix

    7,487
    SIDR390DP-T1-GE3

    规格书

    TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 69.9A (Ta), 100A (Tc) 4.5V, 10V 0.8mOhm @ 20A, 10V 2V @ 250µA 153 nC @ 10 V +20V, -16V 10180 pF @ 15 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8DC
    RS6R035BHTB1

    RS6R035BHTB1

    NCH 150V 35A, HSOP8, POWER MOSFE

    Rohm Semiconductor

    2,420
    RS6R035BHTB1

    规格书

    - 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 35A (Tc) 6V, 10V 41mOhm @ 35A, 10V 4V @ 1mA 25 nC @ 10 V ±20V 1470 pF @ 75 V - 3W (Ta), 73W (Tc) 150°C (TJ) - - Surface Mount 8-HSOP
    IPF016N06NF2SATMA1

    IPF016N06NF2SATMA1

    TRENCH 40<-<100V

    Infineon Technologies

    989
    IPF016N06NF2SATMA1

    规格书

    StrongIRFET™2 TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 35A (Ta), 223A (Tc) 6V, 10V 1.7mOhm @ 100A, 10V 3.3V @ 129µA 162 nC @ 10 V ±20V 7300 pF @ 30 V - 3.8W (Ta), 188W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-U02
    STI6N90K5

    STI6N90K5

    MOSFET N-CH 900V 6A I2PAK

    STMicroelectronics

    125
    STI6N90K5

    规格书

    MDmesh™ K5 TO-262-3 Full Pack, I2PAK Tube Active N-Channel MOSFET (Metal Oxide) 900 V 6A (Tc) 10V 1.1Ohm @ 3A, 10V 5V @ 100µA - ±30V - - 110W (Tc) -55°C ~ 150°C (TJ) - - Through Hole I2PAK
    NTMFS4C020NT1G

    NTMFS4C020NT1G

    MOSFET N-CH 30V 47A/303A 5DFN

    onsemi

    4,241
    NTMFS4C020NT1G

    规格书

    - 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 47A (Ta), 303A (Tc) 4.5V, 10V 0.7mOhm @ 30A, 10V 2.2V @ 250µA 139 nC @ 10 V ±20V 10144 pF @ 15 V - 3.2W (Ta), 134W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    SIDR402EP-T1-RE3

    SIDR402EP-T1-RE3

    N-CHANNEL 40 V (D-S) 175C MOSFET

    Vishay Siliconix

    5,930
    SIDR402EP-T1-RE3

    规格书

    TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 65.2A (Ta), 291A (Tc) 4.5V, 10V 0.88mOhm @ 20A, 10V 2.3V @ 250µA 165 nC @ 10 V +20V, -16V 9100 pF @ 20 V - 7.5W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® SO-8DC
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