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    场效应晶体管(FETs)、MOSFETs

    制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
    R6009END3TL1

    R6009END3TL1

    MOSFET N-CH 600V 9A TO252

    Rohm Semiconductor

    5,016
    R6009END3TL1

    规格书

    - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 535mOhm @ 2.8A, 10V 4V @ 1mA 23 nC @ 10 V ±20V 430 pF @ 25 V - 94W (Tc) 150°C (TJ) - - Surface Mount TO-252
    SIR846DP-T1-GE3

    SIR846DP-T1-GE3

    MOSFET N-CH 100V 60A PPAK SO-8

    Vishay Siliconix

    1,980
    SIR846DP-T1-GE3

    规格书

    TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 7.5V, 10V 7.8mOhm @ 20A, 10V 3.5V @ 250µA 72 nC @ 10 V ±20V 2870 pF @ 50 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    RJK1054DPB-00#J5

    RJK1054DPB-00#J5

    MOSFET N-CH 100V 20A LFPAK

    Renesas Electronics Corporation

    2,475
    RJK1054DPB-00#J5

    规格书

    - SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 20A (Ta) 10V 22mOhm @ 10A, 10V - 27 nC @ 10 V ±20V 2000 pF @ 10 V - 55W (Tc) 150°C (TJ) - - Surface Mount LFPAK
    NP50P04SLG-E1-AY

    NP50P04SLG-E1-AY

    MP-3ZK

    Renesas Electronics Corporation

    3,960
    NP50P04SLG-E1-AY

    规格书

    - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 50A (Ta) 4.5V, 10V 9.6mOhm @ 25A, 10V 2.5V @ 250µA 150 nC @ 10 V ±20V 5700 pF @ 10 V - 1.2W (Ta), 84W (Tc) 175°C - - Surface Mount TO-252 (MP-3ZK)
    SIHA12N60E-E3

    SIHA12N60E-E3

    MOSFET N-CH 600V 12A TO220

    Vishay Siliconix

    923
    SIHA12N60E-E3

    规格书

    - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 937 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
    SIHD186N60EF-GE3

    SIHD186N60EF-GE3

    MOSFET N-CH 600V 19A DPAK

    Vishay Siliconix

    6,140
    SIHD186N60EF-GE3

    规格书

    EF TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 201mOhm @ 9.5A, 10V 5V @ 250µA 32 nC @ 10 V ±30V 1118 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
    R6007ENXC7G

    R6007ENXC7G

    600V 7A TO-220FM, LOW-NOISE POWE

    Rohm Semiconductor

    1,996
    R6007ENXC7G

    规格书

    - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Ta) 10V 620mOhm @ 2.4A, 10V 4V @ 1mA 20 nC @ 10 V ±20V 390 pF @ 25 V - 46W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    SI4368DY-T1-E3

    SI4368DY-T1-E3

    MOSFET N-CH 30V 17A 8SO

    Vishay Siliconix

    1,110
    SI4368DY-T1-E3

    规格书

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta) 4.5V, 10V 3.2mOhm @ 25A, 10V 1.8V @ 250µA 80 nC @ 4.5 V ±12V 8340 pF @ 15 V - 1.6W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    SIHF12N65E-GE3

    SIHF12N65E-GE3

    MOSFET N-CH 650V 12A TO220

    Vishay Siliconix

    993
    SIHF12N65E-GE3

    规格书

    - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 70 nC @ 10 V ±30V 1224 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
    IRF840ASTRLPBF

    IRF840ASTRLPBF

    MOSFET N-CH 500V 8A D2PAK

    Vishay Siliconix

    675
    IRF840ASTRLPBF

    规格书

    - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1018 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    IXTP05N100

    IXTP05N100

    MOSFET N-CH 1000V 750MA TO220AB

    Littelfuse Inc.

    300
    IXTP05N100

    规格书

    - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 750mA (Tc) 10V 17Ohm @ 375mA, 10V 4.5V @ 250µA 7.8 nC @ 10 V ±30V 260 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    SIDR104ADP-T1-RE3

    SIDR104ADP-T1-RE3

    MOSFET N-CH 100V 18.8A/81A PPAK

    Vishay Siliconix

    5,920
    SIDR104ADP-T1-RE3

    规格书

    TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 18.8A (Ta), 81A (Tc) 7.5V, 10V 6.1mOhm @ 15A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 3250 pF @ 50 V - 5.4W (Ta), 100W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8DC
    IPD95R450PFD7ATMA1

    IPD95R450PFD7ATMA1

    MOSFET N-CH 950V 13.3A TO252-3

    Infineon Technologies

    2,466
    IPD95R450PFD7ATMA1

    规格书

    CoolMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 950 V 13.3A (Tc) 10V 450mOhm @ 7.2A, 10V 3.5V @ 360µA 43 nC @ 10 V ±20V 1230 pF @ 400 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
    R6006JNXC7G

    R6006JNXC7G

    MOSFET N-CH 600V 6A TO220FM

    Rohm Semiconductor

    869
    R6006JNXC7G

    规格书

    - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 15V 936mOhm @ 3A, 15V 7V @ 800µA 15.5 nC @ 15 V ±30V 410 pF @ 100 V - 43W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    BSC011N03LSTATMA1

    BSC011N03LSTATMA1

    MOSFET N-CH 30V 39A/100A TDSON

    Infineon Technologies

    5,000
    BSC011N03LSTATMA1

    规格书

    OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 39A (Ta), 100A (Tc) 4.5V, 10V 1.1mOhm @ 30A, 10V 2V @ 250µA 48 nC @ 4.5 V ±20V 6300 pF @ 15 V - 3W (Ta), 115W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TDSON-8 FL
    TK1R5R04PB,LXGQ

    TK1R5R04PB,LXGQ

    MOSFET N-CH 40V 160A D2PAK

    Toshiba Semiconductor and Storage

    2,900
    TK1R5R04PB,LXGQ

    规格书

    U-MOSIX-H TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Ta) 6V, 10V 1.5mOhm @ 80A, 10V 3V @ 500µA 103 nC @ 10 V ±20V 5500 pF @ 10 V - 205W (Tc) 175°C - - Surface Mount D2PAK+
    R6009JND3TL1

    R6009JND3TL1

    MOSFET N-CH 600V 9A TO252

    Rohm Semiconductor

    2,450
    R6009JND3TL1

    规格书

    - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 15V 585mOhm @ 4.5A, 15V 7V @ 1.38mA 22 nC @ 15 V ±30V 645 pF @ 100 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
    STL18N60M2

    STL18N60M2

    MOSFET N-CH 600V 9A POWERFLAT HV

    STMicroelectronics

    1,925
    STL18N60M2

    规格书

    MDmesh™ II Plus 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 308mOhm @ 4.5A, 10V 4V @ 250µA 21.5 nC @ 10 V ±25V 791 pF @ 100 V - 57W (Tc) 150°C (TJ) - - Surface Mount PowerFlat™ (5x6) HV
    R6020ENXC7G

    R6020ENXC7G

    600V 20A TO-220FM, LOW-NOISE POW

    Rohm Semiconductor

    950
    R6020ENXC7G

    规格书

    - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 196mOhm @ 9.5A, 10V 4V @ 1mA 60 nC @ 10 V ±20V 1400 pF @ 25 V - 68W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    IPA60R125CFD7XKSA1

    IPA60R125CFD7XKSA1

    MOSFET N-CH 600V 11A TO220

    Infineon Technologies

    729
    IPA60R125CFD7XKSA1

    规格书

    OptiMOS™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 125mOhm @ 7.8A, 10V 4.5V @ 390µA 36 nC @ 10 V ±20V 1503 pF @ 400 V - 32W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220 Full Pack
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