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    场效应晶体管(FETs)、MOSFETs

    制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
    DMTH8001STLWQ-13

    DMTH8001STLWQ-13

    MOSFET BVDSS: 61V~100V POWERDI10

    Diodes Incorporated

    3,013
    DMTH8001STLWQ-13

    规格书

    - 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 270A (Tc) 10V 1.7mOhm @ 30A, 10V 4V @ 250µA 138 nC @ 10 V ±20V 8894 pF @ 50 V - 6W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount POWERDI1012-8
    DMTH10H1M7STLWQ-13

    DMTH10H1M7STLWQ-13

    MOSFET BVDSS: 61V~100V POWERDI10

    Diodes Incorporated

    1,363
    DMTH10H1M7STLWQ-13

    规格书

    - 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 250A (Tc) 10V 2mOhm @ 30A, 10V 4V @ 250µA 147 nC @ 10 V ±20V 9871 pF @ 50 V - 6W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount POWERDI1012-8
    IPB65R099CFD7AATMA1

    IPB65R099CFD7AATMA1

    MOSFET N-CH 650V 24A TO263-3

    Infineon Technologies

    884
    IPB65R099CFD7AATMA1

    规格书

    CoolMOS™ CFD7A TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 99mOhm @ 12.5A, 10V 4.5V @ 630µA 53 nC @ 10 V ±20V 2513 pF @ 400 V - 127W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-3
    STW15NK50Z

    STW15NK50Z

    MOSFET N-CH 500V 14A TO247-3

    STMicroelectronics

    581
    STW15NK50Z

    规格书

    SuperMESH™ TO-247-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 340mOhm @ 7A, 10V 4.5V @ 100µA 106 nC @ 10 V ±30V 2260 pF @ 25 V - 160W (Tc) -50°C ~ 150°C (TJ) - - Through Hole TO-247-3
    STB25N80K5

    STB25N80K5

    MOSFET N-CH 800V 19.5A D2PAK

    STMicroelectronics

    518
    STB25N80K5

    规格书

    SuperMESH5™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 19.5A (Tc) 10V 260mOhm @ 19.5A, 10V 5V @ 100µA 40 nC @ 10 V ±30V 1600 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    IPL65R095CFD7AUMA1

    IPL65R095CFD7AUMA1

    COOLMOS CFD7 SUPERJUNCTION MOSFE

    Infineon Technologies

    2,970
    IPL65R095CFD7AUMA1

    规格书

    CoolMOS™ 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 29A (Tc) 10V 95mOhm @ 12.5A, 10V 4.5V @ 630µA 53 nC @ 10 V ±20V 2513 pF @ 400 V - 171W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
    PJMH120N60EC_T0_00601

    PJMH120N60EC_T0_00601

    600V/ 120MOHM / 30A/ EASY TO DRI

    Panjit International Inc.

    1,800
    PJMH120N60EC_T0_00601

    规格书

    - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 120mOhm @ 12A, 10V 4V @ 250µA 51 nC @ 10 V ±30V 1960 pF @ 400 V - 235W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD
    TK28V65W5,LQ

    TK28V65W5,LQ

    X35 PB-F POWER MOSFET TRANSISTOR

    Toshiba Semiconductor and Storage

    2,500
    TK28V65W5,LQ

    规格书

    - 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 27.6A (Ta) 10V 140mOhm @ 13.8A, 10V 4.5V @ 1.6mA 90 nC @ 10 V ±30V 3000 pF @ 300 V - 240W (Tc) 150°C - - Surface Mount 4-DFN-EP (8x8)
    IPTC063N15NM5ATMA1

    IPTC063N15NM5ATMA1

    OPTIMOS 5 POWER MOSFET

    Infineon Technologies

    1,800
    IPTC063N15NM5ATMA1

    规格书

    OptiMOS™ 5 16-PowerSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 16.2A (Ta), 122A (Tc) 8V, 10V 6.3mOhm @ 50A, 10V 4.6V @ 163µA 63 nC @ 10 V ±20V 4800 pF @ 75 V - 3.8W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HDSOP-16-2
    STP21N90K5

    STP21N90K5

    MOSFET N-CH 900V 18.5A TO220-3

    STMicroelectronics

    965
    STP21N90K5

    规格书

    SuperMESH5™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 900 V 18.5A (Tc) 10V 299mOhm @ 9A, 10V 5V @ 100µA 43 nC @ 10 V ±30V 1645 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    FCP130N60

    FCP130N60

    MOSFET N-CH 600V 28A TO220-3

    onsemi

    515
    FCP130N60

    规格书

    SuperFET® II TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 130mOhm @ 14A, 10V 3.5V @ 250µA 70 nC @ 10 V ±20V 3590 pF @ 380 V - 278W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    RCJ700N20TL

    RCJ700N20TL

    MOSFET N-CH 200V 70A LPTS

    Rohm Semiconductor

    926
    RCJ700N20TL

    规格书

    - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 70A (Tc) 10V 42.7mOhm @ 35A, 10V 5V @ 1mA 125 nC @ 10 V ±30V 6900 pF @ 25 V - 1.56W (Ta), 40W (Tc) 150°C (TJ) - - Surface Mount LPTS
    IXTQ96N20P

    IXTQ96N20P

    MOSFET N-CH 200V 96A TO3P

    Littelfuse Inc.

    285
    IXTQ96N20P

    规格书

    Polar TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 200 V 96A (Tc) 10V 24mOhm @ 500mA, 10V 5V @ 250µA 145 nC @ 10 V ±20V 4800 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-3P
    IXTH20N65X2

    IXTH20N65X2

    MOSFET N-CH 650V 20A TO247

    Littelfuse Inc.

    114
    IXTH20N65X2

    规格书

    Ultra X2 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 185mOhm @ 10A, 10V 4.5V @ 250µA 27 nC @ 10 V ±30V 1450 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXTH)
    SIHH14N65EF-T1-GE3

    SIHH14N65EF-T1-GE3

    MOSFET N-CH 650V 15A PPAK 8 X 8

    Vishay Siliconix

    3,000
    SIHH14N65EF-T1-GE3

    规格书

    - 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 271mOhm @ 7A, 10V 4V @ 250µA 98 nC @ 10 V ±30V 1749 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 8 x 8
    FDBL0330N80

    FDBL0330N80

    MOSFET N-CH 80V 220A 8HPSOF

    onsemi

    1,966
    FDBL0330N80

    规格书

    PowerTrench® 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 220A (Tc) 10V 3mOhm @ 80A, 10V 4V @ 250µA 112 nC @ 10 V ±20V 6320 pF @ 40 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-HPSOF
    SIHB080N60E-GE3

    SIHB080N60E-GE3

    E SERIES POWER MOSFET D2PAK (TO-

    Vishay Siliconix

    1,722
    SIHB080N60E-GE3

    规格书

    E TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 80mOhm @ 17A, 10V 5V @ 250µA 63 nC @ 10 V ±30V 2557 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    SIHF068N60EF-GE3

    SIHF068N60EF-GE3

    MOSFET N-CH 600V 16A TO220

    Vishay Siliconix

    623
    SIHF068N60EF-GE3

    规格书

    EF TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 68mOhm @ 16A, 10V 5V @ 250µA 77 nC @ 10 V ±30V 2628 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
    SIHK125N60EF-T1GE3

    SIHK125N60EF-T1GE3

    E SERIES POWER MOSFET WITH FAST

    Vishay Siliconix

    2,050
    SIHK125N60EF-T1GE3

    规格书

    EF 8-PowerBSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 125mOhm @ 12A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 1863 pF @ 100 V - 132W (Tc) -55°C ~ 150°C - - Surface Mount PowerPAK®10 x 12
    STP23N80K5

    STP23N80K5

    MOSFET N-CH 800V 16A TO220-3

    STMicroelectronics

    1,105
    STP23N80K5

    规格书

    MDmesh™ K5 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 16A (Tc) 10V 280mOhm @ 8A, 10V 5V @ 100µA 33 nC @ 10 V ±30V 1000 pF @ 100 V - 190W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
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