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    场效应晶体管(FETs)、MOSFETs

    制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
    SIHK185N60EF-T1GE3

    SIHK185N60EF-T1GE3

    EF SERIES POWER MOSFET WITH FAST

    Vishay Siliconix

    2,000
    SIHK185N60EF-T1GE3

    规格书

    EF 8-PowerBSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 193mOhm @ 9.5A, 10V 5V @ 250µA 32 nC @ 10 V ±30V 1081 pF @ 100 V - 114W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK®10 x 12
    STB14NK60ZT4

    STB14NK60ZT4

    MOSFET N-CH 600V 13.5A D2PAK

    STMicroelectronics

    250
    STB14NK60ZT4

    规格书

    SuperMESH™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 13.5A (Tc) 10V 500mOhm @ 6A, 10V 4.5V @ 100µA 75 nC @ 10 V ±30V 2220 pF @ 25 V - 160W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
    AOB29S50L

    AOB29S50L

    MOSFET N-CH 500V 29A TO263

    Alpha & Omega Semiconductor Inc.

    840
    AOB29S50L

    规格书

    aMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 29A (Tc) 10V 150mOhm @ 14.5A, 10V 3.9V @ 250µA 26.6 nC @ 10 V ±30V 1312 pF @ 100 V - 357W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    IPP60R090CFD7XKSA1

    IPP60R090CFD7XKSA1

    MOSFET N-CH 600V 25A TO220-3

    Infineon Technologies

    462
    IPP60R090CFD7XKSA1

    规格书

    OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 90mOhm @ 11.4A, 10V 4.5V @ 570µA 51 nC @ 10 V ±20V 2103 pF @ 400 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    STP15N80K5

    STP15N80K5

    MOSFET N-CH 800V 14A TO220

    STMicroelectronics

    448
    STP15N80K5

    规格书

    SuperMESH5™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 14A (Tc) 10V 375mOhm @ 7A, 10V 5V @ 100µA 32 nC @ 10 V ±30V 1100 pF @ 100 V - 190W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    FDPF4D5N10C

    FDPF4D5N10C

    MOSFET N-CH 100V 128A TO220F

    onsemi

    7,341
    FDPF4D5N10C

    规格书

    PowerTrench® TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 128A (Tc) 10V 4.5mOhm @ 100A, 10V 4V @ 310µA 68 nC @ 10 V ±20V 5065 pF @ 50 V - 2.4W (Ta), 37.5W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220F-3
    NP110N055PUK-E1-AY

    NP110N055PUK-E1-AY

    MOSFET N-CH 55V 110A TO263

    Renesas Electronics Corporation

    799
    NP110N055PUK-E1-AY

    规格书

    - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 1.75mOhm @ 55A, 10V 4V @ 250µA 294 nC @ 10 V ±20V 16050 pF @ 25 V - 1.8W (Ta), 348W (Tc) 175°C (TJ) - - Surface Mount TO-263
    STW50N65DM2AG

    STW50N65DM2AG

    MOSFET N-CH 650V 28A TO247

    STMicroelectronics

    596
    STW50N65DM2AG

    规格书

    MDmesh™ DM2 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 28A (Tc) 10V 87mOhm @ 19A, 10V 5V @ 250µA 70 nC @ 10 V ±25V 3200 pF @ 100 V - 300W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole TO-247-3
    IPB80N08S207ATMA1

    IPB80N08S207ATMA1

    MOSFET N-CH 75V 80A TO263-3

    Infineon Technologies

    409
    IPB80N08S207ATMA1

    规格书

    OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 7.1mOhm @ 80A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 4700 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
    SIHH14N60EF-T1-GE3

    SIHH14N60EF-T1-GE3

    MOSFET N-CH 600V 15A PPAK 8 X 8

    Vishay Siliconix

    3,000
    SIHH14N60EF-T1-GE3

    规格书

    - 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 266mOhm @ 7A, 10V 4V @ 250µA 84 nC @ 10 V ±30V 1449 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 8 x 8
    STF21N65M5

    STF21N65M5

    MOSFET N-CH 650V 17A TO220FP

    STMicroelectronics

    315
    STF21N65M5

    规格书

    MDmesh™ V TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 17A (Tc) 10V 190mOhm @ 8.5A, 10V 5V @ 250µA 50 nC @ 10 V ±25V 1950 pF @ 100 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220FP
    FCPF290N80

    FCPF290N80

    MOSFET N-CH 800V 17A TO220F

    onsemi

    665
    FCPF290N80

    规格书

    PowerTrench® TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 290mOhm @ 8.5A, 10V 4.5V @ 1.7mA 75 nC @ 10 V ±20V 3205 pF @ 100 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    NTB011N15MC

    NTB011N15MC

    NTB011N15MC

    onsemi

    760
    NTB011N15MC

    规格书

    PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 12.5A (Ta), 75.4A (Tc) 8V, 10V 10.9mOhm @ 41A, 10V 4.5V @ 223µA 37 nC @ 10 V ±20V 2810 pF @ 75 V - 3.75W (Ta), 136.4W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
    SIHG21N80AE-GE3

    SIHG21N80AE-GE3

    MOSFET N-CH 800V 17.4A TO247AC

    Vishay Siliconix

    485
    SIHG21N80AE-GE3

    规格书

    E TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 17.4A (Tc) 10V 235mOhm @ 11A, 10V 4V @ 250µA 72 nC @ 10 V ±30V 1388 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
    IPB100N12S305ATMA1

    IPB100N12S305ATMA1

    MOSFET N-CH 120V 100A TO263-3

    Infineon Technologies

    3,882
    IPB100N12S305ATMA1

    规格书

    OptiMOS™ TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120 V 100A (Tc) 10V 5.1mOhm @ 100A, 10V 4V @ 240µA 185 nC @ 10 V ±20V 11570 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-1
    FCMT180N65S3

    FCMT180N65S3

    MOSFET N-CH 650V 17A POWER88

    onsemi

    1,515
    FCMT180N65S3

    规格书

    SuperFET® III 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 17A (Tc) 10V 180mOhm @ 8.5A, 10V 4.5V @ 1.8mA 33 nC @ 10 V ±30V 1350 pF @ 400 V - 139W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount Power88
    SPP24N60C3XKSA1

    SPP24N60C3XKSA1

    MOSFET N-CH 650V 24.3A TO220-3

    Infineon Technologies

    126
    SPP24N60C3XKSA1

    规格书

    CoolMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 24.3A (Tc) 10V 160mOhm @ 15.4A, 10V 3.9V @ 1.2mA 135 nC @ 10 V ±20V 3000 pF @ 25 V - 240W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    IPT063N15N5ATMA1

    IPT063N15N5ATMA1

    TRENCH >=100V PG-HSOF-8

    Infineon Technologies

    3,916
    IPT063N15N5ATMA1

    规格书

    OptiMOS™ 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 16.2A (Ta), 122A (Tc) 8V, 10V 6.3mOhm @ 50A, 10V 4.6V @ 153µA 59 nC @ 10 V ±20V 4550 pF @ 75 V - 3.8W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8
    STP42N60M2-EP

    STP42N60M2-EP

    MOSFET N-CH 600V 34A TO220

    STMicroelectronics

    1,000
    STP42N60M2-EP

    规格书

    MDmesh™ M2-EP TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 34A (Tc) 10V 87mOhm @ 17A, 10V 4.75V @ 250µA 55 nC @ 10 V ±25V 2370 pF @ 100 V - 250W (Tc) 150°C (TJ) - - Through Hole TO-220
    STP20NM50FD

    STP20NM50FD

    MOSFET N-CH 500V 20A TO220AB

    STMicroelectronics

    986
    STP20NM50FD

    规格书

    FDmesh™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 250mOhm @ 10A, 10V 5V @ 250µA 53 nC @ 10 V ±30V 1380 pF @ 25 V - 192W (Tc) -65°C ~ 150°C (TJ) - - Through Hole TO-220
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