图片 | 型号 | 库存 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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S6JDIODE GEN PURP 600V 6A DO4 GeneSiC Semiconductor |
3,598 |
|
![]() 规格书 |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 600 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
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S6JRDIODE GEN PURP REV 600V 6A DO4 GeneSiC Semiconductor |
6,449 |
|
![]() 规格书 |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 600 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
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S6KDIODE GEN PURP 800V 6A DO4 GeneSiC Semiconductor |
3,452 |
|
![]() 规格书 |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 800 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
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S6KRDIODE GEN PURP REV 800V 6A DO4 GeneSiC Semiconductor |
3,912 |
|
![]() 规格书 |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 800 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
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S6MDIODE GEN PURP 1KV 6A DO4 GeneSiC Semiconductor |
7,205 |
|
![]() 规格书 |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 1000 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
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S6MRDIODE GEN PURP REV 1KV 6A DO4 GeneSiC Semiconductor |
6,290 |
|
![]() 规格书 |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 1000 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
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S6QDIODE GEN PURP 1.2KV 6A DO4 GeneSiC Semiconductor |
7,837 |
|
![]() 规格书 |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 1200 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
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S6QRDIODE GEN PURP REV 1.2KV 6A DO4 GeneSiC Semiconductor |
2,316 |
|
![]() 规格书 |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 1200 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
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GC05MPS12-220DIODE SIL CARB 1.2KV 29A TO220-2 GeneSiC Semiconductor |
3,581 |
|
![]() 规格书 |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 29A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 4 µA @ 1200 V | 359pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
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GC10MPS12-220DIODE SIL CARB 1.2KV 54A TO220-2 GeneSiC Semiconductor |
3,074 |
|
![]() 规格书 |
SiC Schottky MPS™ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 54A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1200 V | 660pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |