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    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
    APT30D20BG

    APT30D20BG

    DIODE GP 200V 30A TO247

    Microchip Technology

    141
    APT30D20BG

    规格书

    - TO-247-2 Tube Active Standard 200 V 30A 1.3 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 24 ns 250 µA @ 200 V - - - Through Hole TO-247 [B] -55°C ~ 175°C
    IDD04SG60CXTMA2

    IDD04SG60CXTMA2

    DIODE SIL CARB 600V 4A TO252-3

    Infineon Technologies

    8,891
    IDD04SG60CXTMA2

    规格书

    CoolSiC™+ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 600 V 4A 2.3 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 25 µA @ 600 V 80pF @ 1V, 1MHz - - Surface Mount PG-TO252-3 -55°C ~ 175°C
    STPS15L25D

    STPS15L25D

    DIODE SCHOTTKY 25V 15A TO220AC

    STMicroelectronics

    2,507
    STPS15L25D

    规格书

    - TO-220-2 Tube Active Schottky 25 V 15A 460 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 1.3 mA @ 25 V - - - Through Hole TO-220AC 150°C (Max)
    RBQ30TB45BHZC9

    RBQ30TB45BHZC9

    AUTOMOTIVE SCHOTTKY BARRIER DIOD

    Rohm Semiconductor

    830
    RBQ30TB45BHZC9

    规格书

    - TO-220-2 Full Pack Bulk Active Schottky 45 V 30A 590 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 350 µA @ 45 V - Automotive AEC-Q101 Through Hole TO-220FN-2 150°C
    DSEP12-12A

    DSEP12-12A

    DIODE GEN PURP 1.2KV 15A TO220AC

    IXYS

    428
    DSEP12-12A

    规格书

    HiPerFRED™ TO-220-2 Tube Active Standard 1200 V 15A 2.75 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 100 µA @ 1200 V - - - Through Hole TO-220AC -55°C ~ 175°C
    STTH1512GY-TR

    STTH1512GY-TR

    DIODE GEN PURP 1.2KV 15A D2PAK

    STMicroelectronics

    1,212
    STTH1512GY-TR

    规格书

    - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1200 V 15A 1.9 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 105 ns 15 µA @ 1200 V - Automotive AEC-Q101 Surface Mount D2PAK -40°C ~ 175°C
    VS-20ETS12-M3

    VS-20ETS12-M3

    DIODE GEN PURP 1.2KV 20A TO220AC

    Vishay General Semiconductor - Diodes Division

    2,466
    VS-20ETS12-M3

    规格书

    - TO-220-2 Tube Active Standard 1200 V 20A 1 V @ 10 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 1200 V - - - Through Hole TO-220AC -40°C ~ 150°C
    VS-8EWS12STR-M3

    VS-8EWS12STR-M3

    DIODE GEN PURP 1.2KV 8A D-PAK

    Vishay General Semiconductor - Diodes Division

    1,450
    VS-8EWS12STR-M3

    规格书

    - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 1200 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 1200 V - - - Surface Mount TO-252AA (DPAK) -55°C ~ 150°C
    STTH6006W

    STTH6006W

    DIODE GEN PURP 600V 60A DO247

    STMicroelectronics

    1,099
    STTH6006W

    规格书

    - DO-247-2 (Straight Leads) Tube Active Standard 600 V 60A 1.85 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 85 ns 50 µA @ 600 V - - - Through Hole DO-247 175°C (Max)
    VS-60EPU04-N3

    VS-60EPU04-N3

    DIODE GP 400V 60A TO247AC

    Vishay General Semiconductor - Diodes Division

    542
    VS-60EPU04-N3

    规格书

    FRED Pt® TO-247-2 Tube Active Standard 400 V 60A 1.25 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 85 ns 50 µA @ 400 V - - - Through Hole TO-247AC Modified -55°C ~ 175°C
    IDH06G65C6XKSA1

    IDH06G65C6XKSA1

    DIODE SIL CARB 650V 16A TO220-2

    Infineon Technologies

    576
    IDH06G65C6XKSA1

    规格书

    - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 16A 1.35 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 420 V 302pF @ 1V, 1MHz - - Through Hole PG-TO220-2 -55°C ~ 175°C
    STTH3012D

    STTH3012D

    DIODE GEN PURP 1.2KV 30A TO220AC

    STMicroelectronics

    931
    STTH3012D

    规格书

    - TO-220-2 Tube Active Standard 1200 V 30A 2.25 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 115 ns 20 µA @ 1200 V - - - Through Hole TO-220AC 175°C (Max)
    MBRF40250TG

    MBRF40250TG

    DIODE SCHOTTKY 250V 40A TO220FP

    onsemi

    7,421
    MBRF40250TG

    规格书

    SWITCHMODE™ TO-220-3 Full Pack Tube Active Schottky 250 V 40A 970 mV @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 30 µA @ 250 V 500pF @ 5V, 1MHz - - Through Hole TO-220FP -65°C ~ 150°C
    D6025LTP

    D6025LTP

    DIODE GP 600V 15.9A TO220AB-L

    Littelfuse Inc.

    961
    D6025LTP

    规格书

    - TO-220-3 Isolated Tab Tube Active Standard 600 V 15.9A - Standard Recovery >500ns, > 200mA (Io) 4 µs 10 µA @ 600 V - - - Through Hole TO-220AB-L -40°C ~ 125°C
    APT30D100BG

    APT30D100BG

    DIODE GEN PURP 1KV 30A TO247

    Microchip Technology

    710
    APT30D100BG

    规格书

    - TO-247-2 Tube Active Standard 1000 V 30A 2.3 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 290 ns 250 µA @ 1000 V - - - Through Hole TO-247 -55°C ~ 175°C
    STTH30R04D

    STTH30R04D

    DIODE GEN PURP 400V 30A TO220AC

    STMicroelectronics

    1,199
    STTH30R04D

    规格书

    - TO-220-2 Tube Active Standard 400 V 30A 1.45 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 15 µA @ 400 V - - - Through Hole TO-220AC -40°C ~ 175°C
    IDK06G65C5XTMA2

    IDK06G65C5XTMA2

    DIODE SIL CARB 650V 6A TO263-2

    Infineon Technologies

    3,154
    IDK06G65C5XTMA2

    规格书

    CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 6A 1.8 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 1.1 mA @ 650 V 190pF @ 1V, 1MHz - - Surface Mount PG-TO263-2 -55°C ~ 175°C
    STTH30L06GY-TR

    STTH30L06GY-TR

    DIODE GEN PURP 600V 30A D2PAK

    STMicroelectronics

    11,130
    STTH30L06GY-TR

    规格书

    - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 30A 1.55 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 25 µA @ 600 V - Automotive AEC-Q101 Surface Mount D2PAK -40°C ~ 175°C
    VS-45EPS16L-M3

    VS-45EPS16L-M3

    DIODE GEN PURP 1.6KV 45A TO247AD

    Vishay General Semiconductor - Diodes Division

    467
    VS-45EPS16L-M3

    规格书

    - TO-247-2 Tube Active Standard 1600 V 45A 1.16 V @ 45 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 1600 V - - - Through Hole TO-247AD -40°C ~ 150°C
    APT60D40BG

    APT60D40BG

    DIODE GP 400V 60A TO247

    Microchip Technology

    439
    APT60D40BG

    规格书

    - TO-247-2 Tube Active Standard 400 V 60A 1.5 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 37 ns 250 µA @ 400 V - - - Through Hole TO-247 [B] -55°C ~ 175°C
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