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    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
    STTH30L06W

    STTH30L06W

    DIODE GEN PURP 600V 30A DO247

    STMicroelectronics

    433
    STTH30L06W

    规格书

    - DO-247-2 (Straight Leads) Tube Active Standard 600 V 30A 1.55 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 25 µA @ 600 V - - - Through Hole DO-247 175°C (Max)
    RHRG3060-F085

    RHRG3060-F085

    DIODE GEN PURP 600V 30A TO247-2

    onsemi

    197
    RHRG3060-F085

    规格书

    - TO-247-2 Tube Active Avalanche 600 V 30A 2.1 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 250 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-247-2 -55°C ~ 175°C
    STTH3010GY-TR

    STTH3010GY-TR

    DIODE GEN PURP 1KV 30A D2PAK

    STMicroelectronics

    1,607
    STTH3010GY-TR

    规格书

    - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1000 V 30A 2 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 15 µA @ 1000 V - Automotive AEC-Q101 Surface Mount D2PAK -40°C ~ 175°C
    STTH30R04W

    STTH30R04W

    DIODE GEN PURP 400V 30A DO247

    STMicroelectronics

    398
    STTH30R04W

    规格书

    - DO-247-2 (Straight Leads) Tube Active Standard 400 V 30A 1.45 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 15 µA @ 400 V - - - Through Hole DO-247 -40°C ~ 175°C
    VS-20ETF06-M3

    VS-20ETF06-M3

    DIODE GEN PURP 600V 20A TO220AC

    Vishay General Semiconductor - Diodes Division

    6,918
    VS-20ETF06-M3

    规格书

    - TO-220-2 Tube Active Standard 600 V 20A 1.3 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 160 ns 100 µA @ 600 V - - - Through Hole TO-220AC -40°C ~ 150°C
    STBR3012G2-TR

    STBR3012G2-TR

    DIODE GP 1.2KV 30A D2PAK HV

    STMicroelectronics

    1,403
    STBR3012G2-TR

    规格书

    ECOPACK®2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1200 V 30A 1.3 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 2 µA @ 1200 V - - - Surface Mount D2PAK HV 175°C (Max)
    STPSC10H065BY-TR

    STPSC10H065BY-TR

    DIODE SIL CARBIDE 650V 10A DPAK

    STMicroelectronics

    6,652
    STPSC10H065BY-TR

    规格书

    - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A - No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 480pF @ 0V, 1MHz Automotive AEC-Q101 Surface Mount DPAK -40°C ~ 175°C
    VS-20ETF10-M3

    VS-20ETF10-M3

    DIODE GEN PURP 1KV 20A TO220AC

    Vishay General Semiconductor - Diodes Division

    4,377
    VS-20ETF10-M3

    规格书

    - TO-220-2 Tube Active Standard 1000 V 20A 1.3 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 95 ns 100 µA @ 1000 V - - - Through Hole TO-220AC -40°C ~ 150°C
    VS-8EWF04S-M3

    VS-8EWF04S-M3

    DIODE GEN PURP 400V 8A DPAK

    Vishay General Semiconductor - Diodes Division

    1,765
    VS-8EWF04S-M3

    规格书

    - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active Standard 400 V 8A 1.2 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 100 µA @ 400 V - - - Surface Mount TO-252AA (DPAK) -40°C ~ 150°C
    STBR3012G2Y-TR

    STBR3012G2Y-TR

    DIODE GP 1.2KV 30A D2PAK HV

    STMicroelectronics

    364
    STBR3012G2Y-TR

    规格书

    ECOPACK®2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1200 V 30A 1.3 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 2 µA @ 1200 V - Automotive AEC-Q101 Surface Mount D2PAK HV -40°C ~ 175°C
    STTH3010PI

    STTH3010PI

    DIODE GEN PURP 1KV 30A DOP3I

    STMicroelectronics

    2,860
    STTH3010PI

    规格书

    - DOP3I-2 Insulated (Straight Leads) Tube Active Standard 1000 V 30A 2 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 15 µA @ 1000 V - - - Through Hole DOP3I 175°C (Max)
    1N5618

    1N5618

    DIODE GEN PURP 600V 1A AXIAL

    Microchip Technology

    267
    1N5618

    规格书

    - A, Axial Bulk Active Standard 600 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 600 V - - - Through Hole A, Axial -65°C ~ 200°C
    BY16

    BY16

    DIODE GEN PURP 16000V 0.3A AXIAL

    Diotec Semiconductor

    263
    BY16

    规格书

    - Axial Tape & Reel (TR) Active Standard 16000 V 300mA 15 V @ 300 mA Standard Recovery >500ns, > 200mA (Io) 1.5 µs 1 µA @ 16000 V - - - Through Hole Axial -50°C ~ 150°C
    C3D06060G

    C3D06060G

    DIODE SIL CARB 600V 19A TO263-2

    Wolfspeed, Inc.

    7,066
    C3D06060G

    规格书

    Z-Rec® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active SiC (Silicon Carbide) Schottky 600 V 19A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 600 V 295pF @ 0V, 1MHz - - Surface Mount TO-263-2 -55°C ~ 175°C
    IDD06SG60CXTMA2

    IDD06SG60CXTMA2

    DIODE SIL CARB 600V 6A TO252-3

    Infineon Technologies

    9,208
    IDD06SG60CXTMA2

    规格书

    CoolSiC™+ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 600 V 6A 2.3 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 600 V 130pF @ 1V, 1MHz - - Surface Mount PG-TO252-3 -55°C ~ 175°C
    IDL08G65C5XUMA2

    IDL08G65C5XUMA2

    DIODE SIL CARBIDE 650V 8A VSON-4

    Infineon Technologies

    7,147
    IDL08G65C5XUMA2

    规格书

    CoolSiC™+ 4-PowerTSFN Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 140 µA @ 650 V 250pF @ 1V, 1MHz - - Surface Mount PG-VSON-4 -55°C ~ 150°C
    STTH3010W

    STTH3010W

    DIODE GEN PURP 1KV 30A DO247

    STMicroelectronics

    1,194
    STTH3010W

    规格书

    - DO-247-2 (Straight Leads) Tube Active Standard 1000 V 30A 2 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 15 µA @ 1000 V - - - Through Hole DO-247 175°C (Max)
    DSEP40-03AS-TRL

    DSEP40-03AS-TRL

    DIODE GEN PURP 300V 40A TO263AA

    IXYS

    3,638
    DSEP40-03AS-TRL

    规格书

    HiPerFRED™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 300 V 40A 1.44 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 300 V 50pF @ 150V, 1MHz - - Surface Mount TO-263AA -55°C ~ 175°C
    DSI30-16AS-TUB

    DSI30-16AS-TUB

    DIODE GEN PURP 1.6KV 30A TO263AA

    IXYS

    2,458
    DSI30-16AS-TUB

    规格书

    - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Standard 1600 V 30A 1.29 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 40 µA @ 1600 V 10pF @ 400V, 1MHz - - Surface Mount TO-263AA -40°C ~ 175°C
    STTH6004W

    STTH6004W

    DIODE GEN PURP 400V 60A DO247

    STMicroelectronics

    6,790
    STTH6004W

    规格书

    - DO-247-2 (Straight Leads) Tube Active Standard 400 V 60A 1.2 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 50 µA @ 400 V - - - Through Hole DO-247 175°C (Max)
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