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    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
    63SPB100A

    63SPB100A

    DIODE SCHOTTKY 100V 60A SPD-2A

    SMC Diode Solutions

    4,833
    63SPB100A

    规格书

    - SPD-2A Bulk Active Schottky 100 V 60A 870 mV @ 60 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 100 V 1500pF @ 5V, 1MHz - - Surface Mount SPD-2A -55°C ~ 175°C
    STPSC20H12WL

    STPSC20H12WL

    DIODE SIL CARB 1.2KV 20A DO247

    STMicroelectronics

    142
    STPSC20H12WL

    规格书

    ECOPACK®2 DO-247-2 (Straight Leads) Tube Active SiC (Silicon Carbide) Schottky 1200 V 20A 1.5 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 120 µA @ 1200 V 1650pF @ 0V, 1MHz - - Through Hole DO-247 -40°C ~ 175°C
    DH60-16A

    DH60-16A

    DIODE GEN PURP 1.6KV 60A TO247AD

    IXYS

    892
    DH60-16A

    规格书

    - TO-247-2 Tube Active Standard 1600 V 60A 2.04 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 230 ns 200 µA @ 1400 V 32pF @ 1200V, 1MHz - - Through Hole TO-247AD -55°C ~ 150°C
    VS-HFA30PB120-N3

    VS-HFA30PB120-N3

    DIODE GP 1.2KV 30A TO247AC

    Vishay General Semiconductor - Diodes Division

    154
    VS-HFA30PB120-N3

    规格书

    - TO-247-2 Tube Active Standard 1200 V 30A 4.1 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 170 ns 40 µA @ 1200 V - Automotive AEC-Q101 Through Hole TO-247AC Modified -55°C ~ 150°C
    IDWD20G120C5XKSA1

    IDWD20G120C5XKSA1

    DIODE SIL CARB 1.2KV 62A TO247-2

    Infineon Technologies

    240
    IDWD20G120C5XKSA1

    规格书

    CoolSiC™+ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 62A 1.65 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 166 µA @ 1200 V 1368pF @ 1V, 1MHz - - Through Hole PG-TO247-2 -55°C ~ 175°C
    C4D08120E

    C4D08120E

    DIODE SIL CARB 1.2KV 24.5A TO252

    Wolfspeed, Inc.

    863
    C4D08120E

    规格书

    Z-Rec® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active SiC (Silicon Carbide) Schottky 1200 V 24.5A 3 V @ 2 A No Recovery Time > 500mA (Io) 0 ns 250 µA @ 1200 V 560pF @ 0V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
    GD15MPS17H

    GD15MPS17H

    DIODE SIL CARB 1.7KV 36A TO247-2

    GeneSiC Semiconductor

    1,214
    GD15MPS17H

    规格书

    SiC Schottky MPS™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1700 V 36A 1.8 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1700 V 1082pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
    IDW30G65C5XKSA1

    IDW30G65C5XKSA1

    DIODE SIL CARB 650V 30A TO247-3

    Infineon Technologies

    931
    IDW30G65C5XKSA1

    规格书

    CoolSiC™+ TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 30A 1.7 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 220 µA @ 650 V 860pF @ 1V, 1MHz - - Through Hole PG-TO247-3 -55°C ~ 175°C
    STPSC20H12G2Y-TR

    STPSC20H12G2Y-TR

    DIODE SIL CARB 1.2KV 20A D2PAK

    STMicroelectronics

    2,769
    STPSC20H12G2Y-TR

    规格书

    - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 20A 1.5 V @ 20 A No Recovery Time > 500mA (Io) - 120 µA @ 1200 V 1650pF @ 0V, 1MHz Automotive AEC-Q101 Surface Mount D2PAK HV -40°C ~ 175°C
    JANTXV1N5809US

    JANTXV1N5809US

    DIODE GEN PURP 100V 3A B SQ-MELF

    Microchip Technology

    166
    JANTXV1N5809US

    规格书

    - SQ-MELF, B Bulk Active Standard 100 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
    JANTXV1N5811US

    JANTXV1N5811US

    DIODE GEN PURP 150V 3A B SQ-MELF

    Microchip Technology

    148
    JANTXV1N5811US

    规格书

    - SQ-MELF, B Bulk Active Standard 150 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
    DSDI60-16A

    DSDI60-16A

    DIODE GEN PURP 1.6KV 63A TO247AD

    IXYS

    328
    DSDI60-16A

    规格书

    - TO-247-2 Tube Active Standard 1600 V 63A 4.1 V @ 70 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 2 mA @ 1600 V - - - Through Hole TO-247AD -40°C ~ 150°C
    UJ3D06560KSD

    UJ3D06560KSD

    DIODE SIL CARB 650V 30A TO247-3

    Qorvo

    6,369
    UJ3D06560KSD

    规格书

    - TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 30A 1.7 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 740 µA @ 650 V 1980pF @ 1V, 1MHz - - Through Hole TO-247-3 -55°C ~ 175°C
    VS-70HFL100S05

    VS-70HFL100S05

    DIODE GEN PURP 1KV 70A DO203AB

    Vishay General Semiconductor - Diodes Division

    244
    VS-70HFL100S05

    规格书

    - DO-203AB, DO-5, Stud Bulk Active Standard 1000 V 70A 1.85 V @ 219.8 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 100 µA @ 1000 V - - - Chassis, Stud Mount DO-203AB (DO-5) -40°C ~ 125°C
    VS-85HFR60

    VS-85HFR60

    DIODE GEN PURP 600V 85A DO203AB

    Vishay General Semiconductor - Diodes Division

    120
    VS-85HFR60

    规格书

    - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 600 V 85A 1.2 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 600 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 180°C
    JANS1N6642

    JANS1N6642

    DIODE GEN PURP 75V 300MA DO204AH

    Microchip Technology

    434
    JANS1N6642

    规格书

    - DO-204AH, DO-35, Axial Bulk Active Standard 75 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 500 nA @ 75 V 5pF @ 0V, 1MHz Military MIL-PRF-19500/578 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
    E4D10120A

    E4D10120A

    DIODE SIL CARB 1.2KV 33A TO220-2

    Wolfspeed, Inc.

    386
    E4D10120A

    规格书

    E-Series TO-220-2 Tube Last Time Buy SiC (Silicon Carbide) Schottky 1200 V 33A 1.8 V @ 10 A No Recovery Time > 500mA (Io) - 200 µA @ 1200 V 777pF @ 0V, 1MHz Automotive AEC-Q101 Through Hole TO-220-2 -55°C ~ 175°C
    GD50MPS12H

    GD50MPS12H

    DIODE SIL CARB 1.2KV 92A TO247-2

    GeneSiC Semiconductor

    124
    GD50MPS12H

    规格书

    SiC Schottky MPS™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 92A 1.8 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 15 µA @ 1200 V 1835pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
    C4D20120H

    C4D20120H

    DIODE SIL CARB 1.2KV 54A TO247-2

    Wolfspeed, Inc.

    410
    C4D20120H

    规格书

    Z-Rec® TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 54A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 1500pF @ 0V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
    E4D20120G

    E4D20120G

    DIODE SIL CARB 1.2KV 56A TO263-2

    Wolfspeed, Inc.

    2,376
    E4D20120G

    规格书

    E-Series TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Last Time Buy SiC (Silicon Carbide) Schottky 1200 V 56A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 1474pF @ 0V, 1MHz Automotive - Surface Mount TO-263-2 -55°C ~ 175°C
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