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    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
    STTH30RQ06L2Y-TR

    STTH30RQ06L2Y-TR

    DIODE GEN PURP 600V 30A HU3PAK

    STMicroelectronics

    823
    STTH30RQ06L2Y-TR

    规格书

    - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active Standard 600 V 30A 2.95 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 40 µA @ 600 V - Automotive AEC-Q101 Surface Mount HU3PAK -40°C ~ 175°C
    IDK12G65C5XTMA2

    IDK12G65C5XTMA2

    DIODE SIL CARB 650V 12A TO263-2

    Infineon Technologies

    1,257
    IDK12G65C5XTMA2

    规格书

    CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 12A 1.8 V @ 12 A No Recovery Time > 500mA (Io) 0 ns - 360pF @ 1V, 1MHz - - Surface Mount PG-TO263-2 -55°C ~ 175°C
    1N5614US

    1N5614US

    DIODE GEN PURP 200V 1A D-5A

    Microchip Technology

    250
    1N5614US

    规格书

    - SQ-MELF, A Bulk Active Standard 200 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 200 V - - - Surface Mount D-5A -65°C ~ 200°C
    IDL12G65C5XUMA2

    IDL12G65C5XUMA2

    DIODE SIL CARB 650V 12A VSON-4

    Infineon Technologies

    6,146
    IDL12G65C5XUMA2

    规格书

    CoolSiC™+ 4-PowerTSFN Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 12A 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 190 µA @ 650 V 360pF @ 1V, 1MHz - - Surface Mount PG-VSON-4 -55°C ~ 150°C
    DSEI36-06AS-TUB

    DSEI36-06AS-TUB

    DIODE GEN PURP 600V 37A TO263AA

    IXYS

    1,403
    DSEI36-06AS-TUB

    规格书

    FRED TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Standard 600 V 37A 1.6 V @ 37 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 100 µA @ 600 V - - - Surface Mount TO-263AA -40°C ~ 150°C
    C4D05120E-TR

    C4D05120E-TR

    DIODE SIL CARB 1.2KV 19A TO252-2

    Wolfspeed, Inc.

    1,520
    C4D05120E-TR

    规格书

    Z-Rec® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 19A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 150 µA @ 1200 V 390pF @ 0V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
    1N5550

    1N5550

    DIODE GEN PURP 200V 3A AXIAL

    Microchip Technology

    262
    1N5550

    规格书

    - B, Axial Bulk Active Standard 200 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 200 V - - - Through Hole B, Axial -65°C ~ 175°C
    STTH75S12W

    STTH75S12W

    DIODE GEN PURP 1.2KV 75A DO247

    STMicroelectronics

    295
    STTH75S12W

    规格书

    - DO-247-2 (Straight Leads) Tube Active Standard 1200 V 75A 3.2 V @ 75 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 50 µA @ 1200 V - - - Through Hole DO-247 -40°C ~ 175°C
    VS-40EPS12-M3

    VS-40EPS12-M3

    DIODE GP 1.2KV 40A TO247AC

    Vishay General Semiconductor - Diodes Division

    343
    VS-40EPS12-M3

    规格书

    - TO-247-2 Tube Active Standard 1200 V 40A 1 V @ 20 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 1200 V - - - Through Hole TO-247AC Modified -40°C ~ 150°C
    FFSP2065A

    FFSP2065A

    DIODE SIL CARB 650V 25A TO220-2

    onsemi

    3,918
    FFSP2065A

    规格书

    - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 25A 1.75 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 1085pF @ 1V, 100kHz - - Through Hole TO-220-2 -55°C ~ 175°C
    DNA30E2200PZ-TRL

    DNA30E2200PZ-TRL

    DIODE GEN PURP 2.2KV 30A TO263

    IXYS

    3,257
    DNA30E2200PZ-TRL

    规格书

    - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 2200 V 30A 1.26 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 40 µA @ 2200 V 7pF @ 700V, 1MHz - - Surface Mount TO-263 (D2PAK) -55°C ~ 150°C
    C3D08060G

    C3D08060G

    DIODE SIL CARB 600V 24A TO263-2

    Wolfspeed, Inc.

    205
    C3D08060G

    规格书

    Z-Rec® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active SiC (Silicon Carbide) Schottky 600 V 24A 1.8 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 600 V 441pF @ 0V, 1MHz - - Surface Mount TO-263-2 -55°C ~ 175°C
    VS-80APS12-M3

    VS-80APS12-M3

    DIODE GEN PURP 1.2KV 80A TO247AC

    Vishay General Semiconductor - Diodes Division

    3,977
    VS-80APS12-M3

    规格书

    - TO-247-3 Tube Active Standard 1200 V 80A 1.17 V @ 80 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 1200 V - - - Through Hole TO-247AC -40°C ~ 150°C
    IDWD150E65E7XKSA1

    IDWD150E65E7XKSA1

    DIODE GEN PURP 650V 200A TO247-2

    Infineon Technologies

    328
    IDWD150E65E7XKSA1

    规格书

    - TO-247-2 Tube Active Standard 650 V 200A 2.1 V @ 150 A Fast Recovery =< 500ns, > 5A (Io) 97 ns 20 µA @ 650 V - - - Through Hole PG-TO247-2-2 -40°C ~ 175°C
    DPG60IM300PC-TRL

    DPG60IM300PC-TRL

    DIODE GEN PURP 300V 60A TO263AA

    IXYS

    1,956
    DPG60IM300PC-TRL

    规格书

    HiPerFRED²™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 300 V 60A 1.43 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 1 µA @ 300 V - - - Surface Mount TO-263AA -55°C ~ 175°C
    FFSM2065B

    FFSM2065B

    DIODE SIL CARB 650V 23.4A 4PQFN

    onsemi

    2,096
    FFSM2065B

    规格书

    - 4-PowerTSFN Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 23.4A 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 866pF @ 1V, 100kHz - - Surface Mount 4-PQFN (8x8) -55°C ~ 175°C
    STPSC10H12G2-TR

    STPSC10H12G2-TR

    DIODE SIL CARB 1.2KV 10A D2PAK

    STMicroelectronics

    570
    STPSC10H12G2-TR

    规格书

    ECOPACK®2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.5 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 1200 V 725pF @ 0V, 1MHz - - Surface Mount D2PAK HV -40°C ~ 175°C
    VS-60EPS08-M3

    VS-60EPS08-M3

    DIODE GP 800V 60A TO247AC

    Vishay General Semiconductor - Diodes Division

    2,185
    VS-60EPS08-M3

    规格书

    - TO-247-2 Tube Active Standard 800 V 60A 1.09 V @ 60 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 800 V - - - Through Hole TO-247AC Modified -40°C ~ 150°C
    VS-60EPS12-M3

    VS-60EPS12-M3

    DIODE GP 1.2KV 60A TO247AC

    Vishay General Semiconductor - Diodes Division

    408
    VS-60EPS12-M3

    规格书

    - TO-247-2 Tube Active Standard 1200 V 60A 1.09 V @ 60 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 1200 V - - - Through Hole TO-247AC Modified -40°C ~ 150°C
    FFSB2065BDN-F085

    FFSB2065BDN-F085

    DIODE SIC 650V 23.6A D2PAK-3

    onsemi

    659
    FFSB2065BDN-F085

    规格书

    - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active SiC (Silicon Carbide) Schottky 650 V 23.6A 1.75 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 421pF @ 1V, 100kHz Automotive AEC-Q101 Surface Mount TO-263 (D2PAK) -55°C ~ 175°C
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