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    场效应晶体管(FETs)、MOSFETs

    制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
    IPL65R130C7AUMA1

    IPL65R130C7AUMA1

    MOSFET N-CH 650V 15A 4VSON

    Infineon Technologies

    3,088
    IPL65R130C7AUMA1

    规格书

    CoolMOS™ C7 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 130mOhm @ 4.4A, 10V 4V @ 440µA 35 nC @ 10 V ±20V 1670 pF @ 400 V - 102W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
    NVMFS5C410NAFT1G

    NVMFS5C410NAFT1G

    MOSFET N-CH 40V 46A/300A 5DFN

    onsemi

    1,330
    NVMFS5C410NAFT1G

    规格书

    - 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 46A (Ta), 300A (Tc) 10V 0.92mOhm @ 50A, 10V 3.5V @ 250µA 86 nC @ 10 V ±20V 6100 pF @ 25 V - 3.9W (Ta), 166W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
    R6520ENZ4C13

    R6520ENZ4C13

    650V 20A TO-247, LOW-NOISE POWER

    Rohm Semiconductor

    1,153
    R6520ENZ4C13

    规格书

    - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 205mOhm @ 9.5A, 10V 4V @ 630µA 61 nC @ 10 V ±20V 1400 pF @ 25 V - 231W (Tc) 150°C (TJ) - - Through Hole TO-247G
    IXFA10N60P-TRL

    IXFA10N60P-TRL

    MOSFET N-CH 600V 10A D2-PAK

    Littelfuse Inc.

    700
    IXFA10N60P-TRL

    规格书

    HiPerFET™, Polar - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    SIHH250N60EF-T1GE3

    SIHH250N60EF-T1GE3

    EF SERIES POWER MOSFET WITH FAST

    Vishay Siliconix

    3,050
    SIHH250N60EF-T1GE3

    规格书

    EF 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 250mOhm @ 5.5A, 10V 5V @ 250µA 23 nC @ 10 V ±30V 915 pF @ 100 V - 89W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 8 x 8
    IPL65R115CFD7AUMA1

    IPL65R115CFD7AUMA1

    COOLMOS CFD7 SUPERJUNCTION MOSFE

    Infineon Technologies

    3,000
    IPL65R115CFD7AUMA1

    规格书

    CoolMOS™ 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 115mOhm @ 9.7A, 10V 4.5V @ 480µA 41 nC @ 10 V ±20V 1942 pF @ 400 V - 144W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
    RSJ550N10TL

    RSJ550N10TL

    MOSFET N-CH 100V 55A LPTS

    Rohm Semiconductor

    886
    RSJ550N10TL

    规格书

    - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 55A (Ta) 4V, 10V 16.8mOhm @ 27.5A, 10V 2.5V @ 1mA 143 nC @ 10 V ±20V 6150 pF @ 25 V - 100W (Tc) 150°C (TJ) - - Surface Mount LPTS
    SPP20N65C3XKSA1

    SPP20N65C3XKSA1

    MOSFET N-CH 650V 20.7A TO220-3

    Infineon Technologies

    454
    SPP20N65C3XKSA1

    规格书

    CoolMOS™ TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 20.7A (Tc) 10V 190mOhm @ 13.1A, 10V 3.9V @ 1mA 114 nC @ 10 V ±20V 2400 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    STD13NM60ND

    STD13NM60ND

    MOSFET N-CH 600V 11A DPAK

    STMicroelectronics

    9,424
    STD13NM60ND

    规格书

    FDmesh™ II TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 380mOhm @ 5.5A, 10V 5V @ 250µA 24.5 nC @ 10 V ±25V 845 pF @ 50 V - 109W (Tc) 150°C (TJ) - - Surface Mount DPAK
    RCJ331N25TL

    RCJ331N25TL

    250V 33A, NCH, TO-263S, POWER MO

    Rohm Semiconductor

    1,990
    RCJ331N25TL

    规格书

    - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250 V 33A (Tc) 10V 105mOhm @ 16.5A, 10V 5V @ 1mA 80 nC @ 10 V ±30V 4500 pF @ 25 V - 1.56W (Ta), 211W (Tc) 150°C (TJ) - - Surface Mount TO-263S
    FCP099N65S3

    FCP099N65S3

    MOSFET N-CH 650V 30A TO220-3

    onsemi

    800
    FCP099N65S3

    规格书

    SuperFET® III TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 99mOhm @ 15A, 10V 4.5V @ 3mA 61 nC @ 10 V ±30V 2480 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    STF13NM60ND

    STF13NM60ND

    MOSFET N-CH 600V 11A TO220FP

    STMicroelectronics

    662
    STF13NM60ND

    规格书

    FDmesh™ II TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 380mOhm @ 5.5A, 10V 5V @ 250µA 24.5 nC @ 10 V ±25V 845 pF @ 50 V - 25W (Tc) 150°C (TJ) - - Through Hole TO-220FP
    RCJ451N20TL

    RCJ451N20TL

    200V 45A, NCH, TO-263S, POWER MO

    Rohm Semiconductor

    986
    RCJ451N20TL

    规格书

    - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 45A (Tc) 10V 55mOhm @ 22.5A, 10V 5V @ 1mA 80 nC @ 10 V ±30V 4200 pF @ 25 V - 1.56W (Ta), 211W (Tc) 150°C (TJ) - - Surface Mount TO-263S
    IXFP10N80P

    IXFP10N80P

    MOSFET N-CH 800V 10A TO220AB

    Littelfuse Inc.

    240
    IXFP10N80P

    规格书

    HiPerFET™, Polar TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 10A (Tc) 10V 1.1Ohm @ 5A, 10V 5.5V @ 2.5mA 40 nC @ 10 V ±30V 2050 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    IPW65R125CFD7XKSA1

    IPW65R125CFD7XKSA1

    HIGH POWER_NEW

    Infineon Technologies

    235
    IPW65R125CFD7XKSA1

    规格书

    CoolMOS™ CFD7 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 19A (Tc) 10V 125mOhm @ 8.5A, 10V 4.5V @ 420µA 36 nC @ 10 V ±20V 1694 pF @ 400 V - 98W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3
    STWA30N65DM6AG

    STWA30N65DM6AG

    MOSFET N-CH 650V 28A TO247

    STMicroelectronics

    600
    STWA30N65DM6AG

    规格书

    - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 28A (Tc) 10V 110mOhm @ 14A, 10V 4.75V @ 250µA 46 nC @ 10 V ±25V 2000 pF @ 100 V - 284W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole TO-247 Long Leads
    IXTQ22N60P

    IXTQ22N60P

    MOSFET N-CH 600V 22A TO3P

    Littelfuse Inc.

    105
    IXTQ22N60P

    规格书

    Polar TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 350mOhm @ 11A, 10V 5.5V @ 250µA 62 nC @ 10 V ±30V 3600 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3P
    AOB125A60L

    AOB125A60L

    MOSFET N-CH 600V 28A TO263

    Alpha & Omega Semiconductor Inc.

    1,255
    AOB125A60L

    规格书

    aMOS5™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 125mOhm @ 14A, 10V 4.5V @ 250µA 39 nC @ 10 V ±20V 2993 pF @ 100 V - 357W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    IRFBC40LCPBF-BE3

    IRFBC40LCPBF-BE3

    MOSFET N-CH 600V 6.2A TO220AB

    Vishay Siliconix

    843
    IRFBC40LCPBF-BE3

    规格书

    - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) - 1.2Ohm @ 3.7A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    SIHA125N60EF-GE3

    SIHA125N60EF-GE3

    MOSFET N-CH 600V 11A TO220

    Vishay Siliconix

    992
    SIHA125N60EF-GE3

    规格书

    EF TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 125mOhm @ 12A, 10V 5V @ 250µA 47 nC @ 10 V ±30V 1533 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
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